DataSheet.jp

1SS181 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 1SS181
部品説明 Ultra High Speed Switching Diode
メーカ WILLAS
ロゴ WILLAS ロゴ 

Total 3 pages
		

No Preview Available !

1SS181 Datasheet, 1SS181 PDF,ピン配置, 機能
WILLAS
SCS501V
VOLTAGE 40V
0.1AMP Schottky Barrier Rectifiers
Ultra High Speed Switching
Application Pb Free Product
FEATURES
1SS181
SOD-323(SC-76)
* ExtremelyzLoLwoVwFforward voltage : VF (3) = 0.92V (typ.)
* ExtremelyzthFinapsatcrkeavgeerse recovery time : trr = 1.6ns (typ.)
.012 (0.3)
Cathode Band
* Low storezd cShamrgaell total capacitance : CT = 2.2pF (typ.)
* Majority czarrWierecodnedcuclatioren that the material of product
compliance with RoHS requirements.
MECHANICAL DATA
* Case:Molded plastic, JEDEC SOD-323(SC-76)
Driver Marking
* Terminal : Solder plated, solderable per MIL-STD-750,
1SSM18e1th=odA23026
.059 (1.5)
.043 (1.1) 3
ANODE
Top View
SOT –23
Dimensions in inches
and (millimeters)
CATHODE
1
2
CATHODE
* PoMlaraityx:iImndiucamtedRbyactaitnhogdesb(aTndA = 25°C)
* Mounting PoCsihtiaorna:cAtenryistic
* WeigMhta:x0im.0u0m01(5p9eoaukn) cree,v0e.r0s0e4v5ogltraagme
Reverse voltage
Maximum (peak) forward current
Symbol
VRM
VR
IFM
Rating
85
80
300 *
Unit
V
MaVrking Code: JV or 4
mA
.010 (0.25)
min.
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM 2 *
A
Power dissipation
P 150 mW
MAJXunIcMtionUtemMperaRturAe TING AND ETj LECTRI1C25 AL CHA°CRACTERISTICS
Storage temperature range
Tstg -55~+125 °C
Rating 25oC ambient temperature unless otherwise specified.
Sing*le: Uphniat sraetihnga.lfTowtaalvrea,tin6g0H= zU,nriet sraistitnigve× o1f.5i.nductive load.
For capacitive load, derate current by 20%
Electrical Characteristics (TA = 25°C)
CharacPtearriasmticeter
Symbol
Repetitive Peak Reverse Voltage
Test
Circuit
Conditions
Test Condition
Continuous Reverse Voltage
Forward voltage
Forward Voltage
Reverse current
Reverse Current
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
I F = 10mA DC
I F = 100mA DC
VR = 10V DC
IF = 1mA
IF = 10mA
IF = 100mA
VR = 30V
VR = 80V
Mean RToetcatlifcyainpgaCciutarrnecnet
CT – VR = 0, f = 1MHz
Peak fRorewvaerrdsesurregceocvuerrryentitme
trr
– IF = 10mA (Fig.5)
Min
TypS.ymbolMaMx in.
VRM
0.61
0.74
VR
0.90 VF1 1.20
VF2 0.1
IR 0.5
2.2 IO 4.0
1.6 IFSM 4.0
UTnyipt .
V
µA
p0F.1
n1s
Max.
45
40
0.34
0.55
30
Unit
V
V
V
V
µA
A
A
Capacitance between terminals
CT 6.0
pF
Operating Temperature
Storage Temperature
TJ
TSTG
125
-40 +125
oC
oC

1 Page





ページ 合計 : 3 ページ
PDF
ダウンロード
[ 1SS181.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
1SS181

There is a function of SILICON EPITAXIAL PLANAR DIODE.

Toshiba Semiconductor
Toshiba Semiconductor
1SS181

There is a function of SWITCHING DIODE.

JCET
JCET
1SS181

There is a function of Ultra High Speed Switching Diode.

WILLAS
WILLAS
1SS181

There is a function of High Speed Switching Diodes.

MCC
MCC

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap