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PDF ME2345A Data sheet ( Hoja de datos )
| Número de pieza | ME2345A | |
| Descripción | P-Channel 30V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
GENERAL DESCRIPTION
The ME2345A is the P-Channel logic enhancement mode power field
effect transistors are produced using high cell density , DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where switching and low in-line power loss are needed in a very
small outline surface mount package.
PIN CONFIGURATION
(SOT-23)
Top View
FEATURES
● RDS(ON) ≦68mΩ@VGS=-10V
● RDS(ON) ≦80mΩ@VGS=-4.5V
● RDS(ON) ≦100mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
e Ordering Information: ME2345A (Pb-free)
ME2345A-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDS
VGS
ID
IDM
PD
TJ
RθJA
Maximum Ratings
-30
±12
-3.6
-2.9
-14
1.4
0.9
-55 to 150
90
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
Jun, 2012-Ver4.4
01
1 page  
P-Channel 30V (D-S) MOSFET
ME2345A/ME2345A-G
SOT-23 Package Outline
MILLIMETERS (mm)
DIM
MIN MAX
A 2.800
3.00
B 1.200
1.70
C 0.900
1.30
D 0.350
0.50
G 1.780
2.04
H 0.010
0.15
J 0.085
0.20
K 0.300
0.65
L 0.890
1.02
S 2.100
3.00
V 0.450
0.60
Jun, 2012-Ver4.4
05
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet ME2345A.PDF ] | |
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