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PDF STW33N60M2 Data sheet ( Hoja de datos )
| Número de pieza | STW33N60M2 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF33N60M2, STI33N60M2,
STP33N60M2, STW33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB Features
123
I2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
VDS @
TJmax
RDS(on)
max
ID
26 A(1)
650 V 0.125 Ω
26 A
1. Limited by maximum junction temperature.
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LCC converters, resonant converters
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
Table 1. Device summary
Marking
Package
33N60M2
TO-220FP
I2PAK
TO-220
TO-247
Packaging
Tube
November 2013
This is information on a product in full production.
DocID024298 Rev 2
1/19
www.st.com
1 page  
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 26 A
ISDM (1) Source-drain current (pulsed)
- 104 A
VSD (2) Forward on voltage
ISD = 26 A, VGS = 0
-
1.6 V
trr Reverse recovery time
- 375
Qrr Reverse recovery charge
ISD = 26 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 23)
-
5.6
IRRM Reverse recovery current
- 30
ns
µC
A
trr Reverse recovery time
ISD = 26 A, di/dt = 100 A/µs - 478
Qrr Reverse recovery charge
VDD = 60 V, Tj = 150 °C
- 7.7
IRRM Reverse recovery current
(see Figure 23)
- 32.5
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024298 Rev 2
5/19
19
5 Page 
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
Package mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Table 9. TO-220FP mechanical data
mm
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Typ.
16
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
DocID024298 Rev 2
11/19
19
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet STW33N60M2.PDF ] | |
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