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STI33N60M2 の電気的特性と機能

STI33N60M2のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STI33N60M2
部品説明 N-CHANNEL POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STI33N60M2 Datasheet, STI33N60M2 PDF,ピン配置, 機能
STF33N60M2, STI33N60M2,
STP33N60M2, STW33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB Features
123
I2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
, TAB
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
VDS @
TJmax
RDS(on)
max
ID
26 A(1)
650 V 0.125 Ω
26 A
1. Limited by maximum junction temperature.
Extremely low gate charge
Lower RDS(on) x area vs previous generation
MDmesh™ II technology
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
LCC converters, resonant converters
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF33N60M2
STI33N60M2
STP33N60M2
STW33N60M2
Table 1. Device summary
Marking
Package
33N60M2
TO-220FP
I2PAK
TO-220
TO-247
Packaging
Tube
November 2013
This is information on a product in full production.
DocID024298 Rev 2
1/19
www.st.com

1 Page





STI33N60M2 pdf, ピン配列
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
I2PAK, TO-220
TO-247
TO-220FP
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
dv/dt(4)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
± 25
26 26(1)
16 16(1)
104 104(1)
190 35
15
50
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 26 A, di/dt 400 A/µs; VDS peak < V(BR)DSS, VDD= 400 V.
4. VDS 480 V
- 55 to 150
Unit
V
A
A
A
W
V/ns
V/ns
V
°C
Symbol
Table 3. Thermal data
Value
Parameter
TO-220FP
I2PAK,
TO-220
TO-247
Unit
Rthj-case
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
3.6
62.5
0.66
50
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
IAR
Avalanche current, repetitive or not
repetitive (pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
Tj=25°C, ID= IAR; VDD=50)
5
2300
Unit
A
mJ
DocID024298 Rev 2
3/19
19


3Pages


STI33N60M2 電子部品, 半導体
Electrical characteristics
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP
ID AM17917v1
(A)
Figure 3. Thermal impedance for TO-220FP
100
10
1
OpLeirmatiitoend ibnythmisaxarReDaSi(son)
10µs
100µs
1ms
10ms
0.1 Tj=150°C
Tc=25°C
Single pulse
0.01
0.1 1 10 100 VDS(V)
Figure 4. Safe operating area for I2PAK and
TO-220
ID AM17906v1
(A)
Figure 5. Thermal impedance for I2PAK and
TO-220
100
10 10µs
100µs
1ms
1 10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1 1 10 100 VDS(V)
Figure 6. Safe operating area for TO-247
ID AM17918v1
(A)
Figure 7. Thermal impedance for TO-247
100
10µs
10 100µs
1ms
1 10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.1 1 10 100 VDS(V)
6/19 DocID024298 Rev 2

6 Page



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部品番号部品説明メーカ
STI33N60M2

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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