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STP33N10 の電気的特性と機能

STP33N10のメーカーはSTMicroelectronicsです、この部品の機能は「N-CHANNEL POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STP33N10
部品説明 N-CHANNEL POWER MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STP33N10 Datasheet, STP33N10 PDF,ピン配置, 機能
STP33N10
STP33N10FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP33N10
STP33N10FI
VDSS
100 V
100 V
R DS( on)
< 0.06
< 0.06
ID
33 A
18 A
s TYPICAL RDS(on) = 0.045
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S
VDG R
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
VGS
ID
ID
ID M()
Ptot
Gate-source Voltage
Drain Current (continuous) at T c = 25 oC
Drain Current (continuous) at T c = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1993
Val ue
STP33N10
ST P3 3N 10 F I
100
100
± 20
33 18
23 12
132 132
150 45
1 0.3
2000
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10

1 Page





STP33N10 pdf, ピン配列
STP33N10/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
(di/ d t) o n
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V ID = 5 A
RG = 50
VGS = 10 V
(see test circuit, figure 3)
VDD = 80 V ID = 33 A
RG = 50
VGS = 10 V
(see test circuit, figure 5)
VDD = 80 V ID = 33 A VGS = 10 V
Min.
Typ.
55
110
300
55
11
26
Max.
80
160
80
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V ID = 33 A
RG = 50 VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
110
85
200
Max.
160
120
290
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Conditions
IS D
I SDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 33 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 33 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
33
132
Unit
A
A
1.6
140
V
ns
0.7 µC
10 A
Safe Operating Areas For TO-220
Safe Operating Areas For ISOWATT220
3/10


3Pages


STP33N10 電子部品, 半導体
STP33N10/FI
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
6/10

6 Page



ページ 合計 : 10 ページ
 
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[ STP33N10 データシート.PDF ]


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共有リンク

Link :


部品番号部品説明メーカ
STP33N10

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics
STP33N10FI

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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