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PDF KTD2058 Data sheet ( Hoja de datos )
| Número de pieza | KTD2058 | |
| Descripción | TRIPLE DIFFUSED NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD2058
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
Complementary to KTB1366.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
60
60
7
3
0.5
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE Classification O:60 120, Y:100 200
TEST CONDITION
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
IB1
INPUT
IB2
IB1
IB2
IB1=-I B2 =0.2A
DUTY CYCLE <= 1%
OUTPUT
15Ω
VCC =30V
MIN.
-
-
60
60
-
-
-
-
TYP.
-
-
-
-
0.25
0.7
3.0
35
MAX. UNIT
1A
1A
-V
200
1.0 V
1.0 V
- MHz
- pF
- 0.65 -
- 1.3 -
S
- 0.65 -
2009. 7. 23
Revision No : 4
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTD2058.PDF ] | |
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