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BD9610AMUV データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 BD9610AMUV
部品説明 60V Synchronous Step-down Switching Regulator
メーカ Rohm
ロゴ Rohm ロゴ 

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BD9610AMUV Datasheet, BD9610AMUV PDF,ピン配置, 機能
High Performance Switching Regulator Series
60V Synchronous Step-down
Switching Regulator(Controller type)
BD9610AMUV
General Description
The BD9610AMUV is a family of high resistance and
wide-input voltage (10V to 56V), synchronous,
step-down switching regulator. BD9610AMUV offers
design flexibility with a variety of user-programmable
functions, including soft-start, operating frequency,
high-side current limit, and loop compensation.
BD9610AMUV uses the pulse-width modulation
method of the voltage mode, and drives 2 external
Nch-FETs. The externally programmable current limit
provides pulse-by-pulse current limit, as well as
hiccup mode operation utilizing an internal fault
counter for longer duration overloads.BD9610AMUV
is safe for pre-biased outputs, not turning on the
synchronous rectifier until the high-side FET has
already started switching
Features
High Resistance and Wide Range Input
Voltage :VCC=10V~56V
Internal Outside FET Gate Driver:REG10=10V
0.8V±1.0% Reference Voltage Accuracy
Safe for Pre-biased Outputs
Adjustable Oscillating Frequency and Soft-Start
Master/Slave Synchronize Function
Over Current Protection (OCP)
Under Voltage Locked Output(UVLO)
Thermal Shut-down(TSD)
Key Specifications
Input Supply Voltage
Output Voltage
Reference Voltage Accuracy
Gate Drive Voltage(REG10)
Frequency
10~56 [V]
1.0~(Vin×0.8) [V]
±1.0 [%]
9~11 [V]
50~500 [kHz]
Package
VQFN020V4040
4.00 ㎜×4.00 ㎜×1.00
Applications
Amusement machines
FA Equipments
OA Equipments
LED Lighting Equipments
General Equipments used 24V,48V Bus line
Typical Application Circuit
Vo
140kΩ
10kΩ
FB
1kΩ 11kΩ
180pF 4700pF
INV
SS
0.01μF
REG5
0.1μF
RTSS
0.01μF
RT
75kΩ
SYNC
CLKOUT
ON/OFF 1μF
CTL
VCC
CLH
CLL
RCL
20kΩ
BST
10μF×4
5mΩ
VIN
VIN
=15-56V
HG
BD9610AMUV
0.47μF
LX
REG10
Nch
SUD23N06-31L
(Vishay Siliconix)
Vo
10μF×4
VOUT
=12V
5μH
(DCR=3mΩ)
220μF
LG
1μF
Nch
SUD23N06-31L
(Vishay Siliconix)
A Type of Efficiency
η=95%
(Vin=34V,Io=10A,fosc=250kHz)
100
90
80
70
60 Vin=34V,Vo=12V
50
0 5 10 15
Iout [A]
GND
PGND
STRUCURESilicon Monolithic Integrated Circuit Not designed to withstand radiation.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/27
TSZ02201-0Q1Q0AJ00010-1-2
24.OCT.2014 Rev.002

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