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Número de pieza | BCR10CS-12LB | |
Descripción | Triac | |
Fabricantes | Renesas | |
Logotipo | ||
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No Preview Available ! BCR10CS-12LB
Triac
Medium Power Use
Preliminary Datasheet
R07DS0224EJ0400
(Previous: REJ03G0469-0300)
Rev.4.00
Dec 14, 2010
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
EOL PKG4
1
23
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid
state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
Unit
A
A
A2s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 128CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 1 of 8
1 page BCR10CS-12LB
Latching Current vs.
Junction Temperature
103
7
5
3
2 Distribution T2+, G–
102 Typical Example
7
5
3
2
101
7
5
3
2
TT22+–,,
G+
G–
Typical Example
100
–40 0
40 80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140 Tj = 125°C
120
100 III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
7
5
Main Voltage
(dv/dt)c
Time
VD
Typical Example
Tj = 125°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
7
Minimum
Characteristics
5 Value
I Quadrant
3
2
100
7100
III Quadrant
2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100 III Quadrant
80
60
40 I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=150°C)
7
5 Main Voltage
Time Typical Example
(dv/dt)c
VD Tj = 150°C
3
Main Current
IT
2
τ
(di/dt)c
Time
IT = 4A
τ = 500μs
VD = 200V
101 f = 3Hz
7
5 I Quadrant
3 III Quadrant
2
Minimum
100
Characteristics
Value
7100 2 3 5 7 101
23
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0224EJ0400 Rev.4.00
Dec 14, 2010
Page 5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet BCR10CS-12LB.PDF ] |
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