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AP9476GM-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP9476GM-HF |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP9476GM-HFダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP9476GM-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
D
D
D
D
SO-8
G
SS
S
Description
AP9476 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
BVDSS
RDS(ON)
ID
G
60V
21mΩ
7.8A
D
S
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
60
+20
7.8
6.3
40
2.5
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
50
Unit
℃/W
1
201501123
1 Page 40
T A =25 o C
10V
7.0 V
6.0 V
30 5.0 V
20
10
V G = 4.0 V
0
0123
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
50
ID=5A
T A =25 ℃
40
30
20
10
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
40
T A = 150 o C
30
AP9476GM-HF
10V
7.0 V
6 .0 V
5.0 V
20
V G = 4 .0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
ID=7A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ AP9476GM-HF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP9476GM-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP9476GM-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |