|
|
MMBT2907のメーカーはWEITRONです、この部品の機能は「PNP General Purpose Transistors」です。 |
部品番号 | MMBT2907 |
| |
部品説明 | PNP General Purpose Transistors | ||
メーカ | WEITRON | ||
ロゴ | |||
このページの下部にプレビューとMMBT2907ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
PNP General Purpose Transistors
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
MMBT2907
MMBT2907A
COLLECTOR
3
3
1
BASE
2
EMITTER
1
2
SOT-23
2907
-40
2907A
-60
-60
-5.0
-600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
DEVICE MARKING
MMBT2907=M2B; MMBT2907A=2F
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
PD
R qJA
PD
R qJA
TJ,Tstg
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW/ C
C/W
mW
mW/ C
C/W
C
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
MMBT2907
MMBT2907A
V(BR)CEO
-40
-60
-
-
Vdc
Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)
V(BR)CBO
-60
-
Vdc
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Collector Cutoff Current (VCE= -30 Vdc, VEB (0ff )= -0.5Vdc)
ICEX - -50 nAdc
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
(VCB= -50Vdc, IE=0, TA=125 C)
Base Cutoff Current (VCE= -30Vdc, VEB(off )= -0.5Vdc)
MMBT2907
MMBT22907A
MMBT2907
MMBT2907A
MMBT2907A
ICBO
IB
- -0.020
- -0.010
- -20 nAdc
- -10
- -50 nAdc
1.FR-5=1.0 x 0.75 x 0.062 in
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
WEITRON
http://www.weitron.com.tw
1 Page MMBT2907
MMBT2907A
Typical Electrical Characteristics
500
400 125 C
300
25 C
200
VCE=5V
100
-40 C
0
0.1 0.3 1 3 10 30 100 300
IC COLLECTOR CURRENT(mA)
FIG.1 Typical Pulsed Current Gain
vs Collector Current
1
0.8 -40 C
25 C
0.6
125 C
0.4
0.2
b=10
0 1 10 100 500
Ic-COLLECTOR CURRENT (mA)
FIG.3 Base-Emitter Saturation Voltage
vs Collector Current
100
VCB=35V
10
1
0.1
0.01
25
50 75 100
TA- AMBIENT TEMPERATURE ( C)
FIG.5 Collector-Cutoff Current
vs. Ambient Temperature
125
0.5
b=10
0.4
0.3
25 C
0.2
0.1 125 C
-40 C
0
1 10 100 500
IC COLLECTOR CURRENT(mA)
FIG.2 Collector-Emitter Saturation
Voltage vs collector Current
1
0.8 -40 C
0.6 25 C
125 C
0.4
0.2 VCE=5V
0
0.1 1
10
Ic-COLLECTOR CURRENT (mA)
FIG.4 Base Emitter ON Voltage
vs Collector Current
25
20
16
12
Cib
8
4 Cob
0
-0.1
-1
-10 -50
REVERSE BIAS VOLTAGE (V)
FIG.6 Input and Output Capacitance
vs Reverse Bias Voltage
WEITRON
http://www.weitron.com.tw
3Pages MMBT2907
MMBT2907A
SOT-23 Package Outline Dimensions
A
TOP VIEW
BC
E GD
H
K
L
J
M
Unit:mm
Dim Min Max
A 0.35 0.51
B 1.19 1.40
C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
G 1.70 2.10
H 2.70 3.10
J 0.01 0.13
K 0.89 1.10
L 0.30 0.61
M 0.076 0.25
WEITRON
http://www.weitron.com.tw
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ MMBT2907 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBT2907 | PNP General Purpose Amplifier | Galaxy Microelectronics |
MMBT2907 | PNP EPITAXIAL SILICON TRANSISTOR | MIC |
MMBT2907 | PNP GENERAL PURPOSE AMPLIFIER | ART CHIP |
MMBT2907 | PNP (GENERAL PURPOSE TRANSISTOR) | Samsung |