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PDF H8050S Data sheet ( Hoja de datos )
| Número de pieza | H8050S | |
| Descripción | NPN SILICON TRANSISTOR | |
| Fabricantes | Shantou Huashan Electronic Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H8050S (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H8050S
█ APPLICATIONS
Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625W
VCBO——Collector-Base Voltage………………………………40V
VCEO——Collector-Emitter Voltage……………………………20V
VEBO——Emitter-Base Voltage………………………………5V
IC——Collector Current………………………………………500mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，C
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
ICBO
IEBO
HFE（1）
HFE（2）
VCE(sat）
VBE(sat)
VBE(on)
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base-Emitter On Voltage
BVCBO
BVCEO
BVEBO
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
█ hFE Classification
Min Typ Max Unit
Test Conditions
0.1 μA VCB=25V, IE=0
0.1 μA VEB=3V, IC=0
85 500
VCE=1V, IC=50mA
40 VCE=1V, IC=500mA
0.6 V IC=500mA, IB=50mA
1.2 V IC=500mA,IB=50mA
0.6 0.73 V VCE=1V, IC=10mA
40 V IC=100μA，IE=0
20 V IC=2mA，IB=0
5 V IE=100μA，IC=0
B
85—160
C
120—200
D
160—300
E
270—500
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet H8050S.PDF ] | |
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