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H8050 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 H8050
部品説明 NPN Transistors
メーカ Kexin
ロゴ Kexin ロゴ 

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H8050 Datasheet, H8050 PDF,ピン配置, 機能
SMD Type
NPN Tra nsistors
H8050
Transistors
Features
Collector Power Dissipation: PC=0.5W
Collector Current: IC=1.5A
Comlementary to H8550
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
40
25
5
1.5
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
Classification of hfe(1)
Type
Range
Marking
H8050-B
85-160
8050B
H8050-C
120-200
8050C
Symbol
Test conditions
VCBO IC= 100μA, IE=0
VCEO IC= 0.1mA, IB=0
VEBO IE= 100μA, IC=0
ICBO VCB= 40 V,IE=0
ICEO VCE= 20V, IB=0
IEBO VEB= 5V, IC=0
VCE= 1V, IC= 100mA
hFE
VCE= 1V, IC= 800mA
VCE(sat) IC=800mA, IB= 80mA
VBE(sat) IC=800mA, IB=80mA
VBE(on) Ic=1V,VCE=10mA
VBEF IB=1A
Cob VCB=10V,IE=0,f=1MHz
fT VCE= 10V, IC=50mA
H8050-D
160-300
8050D
H8050-D3
300-400
8050D3
1.Base
2.Collector
3.Emitter
Min Typ Max Unit
40 V
25 V
5V
0.1 μA
0.1 μA
0.1 μA
85 400
40
0.5 V
1.2 V
1V
1.55 V
15 pF
100 MHz
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