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SiSS27DN の電気的特性と機能

SiSS27DNのメーカーはVishayです、この部品の機能は「P-Channel 30 V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SiSS27DN
部品説明 P-Channel 30 V (D-S) MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 




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SiSS27DN Datasheet, SiSS27DN PDF,ピン配置, 機能
P-Channel 30 V (D-S) MOSFET
SiSS27DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0056 at VGS = - 10 V
- 30 0.0070 at VGS = - 6 V
0.0090 at VGS = - 4.5 V
ID (A)
- 50e
- 50e
- 50e
Qg (Typ.)
45 nC
PowerPAK 1212-8S
3.3 mm
3.3 mm
S
1
S
2
S
3
G
4
0.75 mm
FEATURES
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm
Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Notebook Computers and Mobile
Computing
- Adaptor Switch
- Load Switch
- DC/DC Converter
- Power Management
G
S
D
8
D
7
D
6
D
5
Bottom View
Ordering Information:
SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)c, d
Limit
- 30
± 20
- 50e
- 50e
- 23a, b
- 18.5a, b
- 200
- 47.5
- 4a, b
- 25
31
57
36
4.8a, b
3a, b
- 50 to 150
260
Unit
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 62847
For technical questions, contact: [email protected]
www.vishay.com
S13-1161-Rev. A, 13-May-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





SiSS27DN pdf, ピン配列
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 10 V thru 5 V
VGS = 4 V
80
20
16
SiSS27DN
Vishay Siliconix
60 12
40 8 TC = 25 °C
20
0
0.0
VGS = 3 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
0.0120
0.0090
0.0060
VGS = 4.5 V
VGS = 6 V
0.0030
VGS = 10 V
0.0000
0
20 40 60 80 100
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
8 ID = 20 A
VDS = 10 V
6
VDS = 5 V
4
VDS = 16 V
4
0
0.0
TC = 125 °C
TC = - 55 °C
0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
3.5
Transfer Characteristics
7000
6000
5000
4000
Ciss
3000
2000
1000
Coss
0
0
Crss
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.6
ID = 15 A
1.4
1.2
1.0
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
2 0.8
0
0 20 40 60 80 100
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62847
For technical questions, contact: [email protected]
www.vishay.com
S13-1161-Rev. A, 13-May-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


SiSS27DN 電子部品, 半導体
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62847.
www.vishay.com
For technical questions, contact: [email protected]
Document Number: 62847
6 S13-1161-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
SiSS27DN

P-Channel 30 V (D-S) MOSFET

Vishay
Vishay
SISS27DN-T1-GE3

30V P-Channel MOSFET

Kexin
Kexin


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