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PDF SISS27DN-T1-GE3 Data sheet ( Hoja de datos )
| Número de pieza | SISS27DN-T1-GE3 | |
| Descripción | 30V P-Channel MOSFET | |
| Fabricantes | Kexin | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SISS27DN-T1-GE3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SMD Type
SISS27DN-T1-GE3
MOSFET
30V P-Channel MOSFET
General Description
Product Summary
The SISS27DN uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is ideal for load switch and battery protection
applications.
• RoHS and Halogen-Free Compliant
VDS
ID (at VGS= -10V)
RDS(ON) (at VGS= -10V)
RDS(ON) (at VGS = -6V)
-30V
-50A
< 6.2mΩ
< 8.9mΩ
100% UIS Tested
100% Rg Tested
PowerPAK 1212-8S
Top View
Bottom
Pin 1
Top View
18
27
36
45
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDSM
IAR, IAS
EAR, EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-30
±25
-50
-39
-210
-25
-20
-44
97
83
33
6.25
4
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
16
45
1.1
Max
20
55
1.5
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page  
SMD Type
MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
TA=25°C
100
TA=100°C
TA=150°C
TA=125°C
10
1
10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
60 10000
50 TA=25°C
1000
40 17
5
30 100 2
20 10
10
10
0
0 25 50 75 100 125
TCASE (°C)
Figure 14: Current De-rating (Note F)
150
1
0.00001
0.001
0.1
10 0
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
RθJA=55°C/W
40
0.1
0.01
0.001
0.0001
0.0001
PD
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
100
1000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SISS27DN-T1-GE3.PDF ] | |
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