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RSR010N10のメーカーはROHM Semiconductorです、この部品の機能は「4V Drive Nch MOSFET」です。 |
部品番号 | RSR010N10 |
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部品説明 | 4V Drive Nch MOSFET | ||
メーカ | ROHM Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとRSR010N10ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Data Sheet
4V Drive Nch MOSFET
RSR010N10
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
Application
Switching
Dimensions (Unit : mm)
TSMT3
(3)
(1) (2)
Abbreviated symbol : ZJ
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RSR010N10
Taping
TL
3000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
VGSS
ID
IDP *1
IS
ISP *1
PD *2
Tch
Tstg
100
20
1
4
0.8
4
1
150
55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
∗1
∗2
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
125
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.05 - Rev.A
1 Page RSR010N10
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
1
VGS=10.0V
0.8 VGS=4.5V
VGS=4.0V
0.6
VGS=2.8V
VGS=2.5V
0.4
0.2
0
0
Ta=25°C
pulsed
0.2 0.4 0.6 0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
10000
Ta=25°C
pulsed
1000
VGS=4.0V
VGS=4.5V
VGS=10V
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
1
VGS=2.5V
Ta=25°C
pulsed
0.8
VGS=10.0V
VGS=4.5V
0.6
VGS=4.0V
VGS=2.8V
0.4
0.2
0
0 2 4 6 8 10
Drain-Source Voltage : VDS [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=10V
pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100 100
10
0.01
0.1 1
Drain Current : ID [A]
10
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=4.5V
pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
0.01
0.1 1
Drain Current : ID [A]
10
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=4V
pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100 100
10
0.01
0.1 1
Drain Current : ID [A]
10
10
0.01
0.1 1
Drain Current : ID [A]
10
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/6
2011.05 - Rev.A
3Pages RSR010N10
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching Time Measurement Circuit
VGS
IG(Const.)
ID
RL
VDS
D.U.T.
VDD
Fig.2-1 Gate Charge Measurement Circuit
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
Qgs
Qg
Qgd
Charge
Fig.2-2 Gate Charge Waveform
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
6/6
2011.05 - Rev.A
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
RSR010N10 | 4V Drive Nch MOSFET | ROHM Semiconductor |
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