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PDF RGTH40TS65D Data sheet ( Hoja de datos )
| Número de pieza | RGTH40TS65D | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | ROHM Semiconductor | |
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RGTH40TS65D
650V 20A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
20A
1.6V
144W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
PFC
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
IH
Taping Code
C11
Marking
RGTH40TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
650
Gate - Emitter Voltage
VGES
30
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
40
20
80
35
20
80
144
72
Operating Junction Temperature
Tj -40 to +175
Storage Temperature
*1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B
1 page  
RGTH40TS65D
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
180
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
50
40
30
20
10
Tj≦175ºC
VGE≧15V
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
100 10µs
10
100µs
1
0.1
0.01
1
TC= 25ºC
Single Pulse
10
100 1000
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
120
100
80
60
40
20 Tj≦175ºC
VGE=15V
0
0 200 400 600 800
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.B
5 Page 
RGTH40TS65D
lInductive Load Switching Circuit and Waveform
Data Sheet
D.U.T.
D.U.T.
VG
Fig.23 Inductive Load Circuit
IF trr , Qrr
diF/dt
Irr
Fig.25 Diode Reverce Recovery Waveform
Gate Drive Time
VGE 10%
90%
IC
td(on)
tr
ton
VCE
90%
td(off)
10%
tf
toff
VCE(sat)
Fig.24 Inductive Load Waveform
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
2014.05 - Rev.B
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet RGTH40TS65D.PDF ] | |
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