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RGT8BM65D の電気的特性と機能

RGT8BM65DのメーカーはROHM Semiconductorです、この部品の機能は「Field Stop Trench IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 RGT8BM65D
部品説明 Field Stop Trench IGBT
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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RGT8BM65D Datasheet, RGT8BM65D PDF,ピン配置, 機能
RGT8BM65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
4A
1.65V
62W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-252
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping
330
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
16
2,500
Welder
Taping Code
TL
Marking
RGT8BM65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
8
4
12
7
4
12
62
31
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A

1 Page





RGT8BM65D pdf, ピン配列
RGT8BM65D
Data Sheet
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Values
Min. Typ.
Max.
Input Capacitance
Cies VCE = 30V
- 220 -
Output Capacitance
Coes VGE = 0V
- 14 -
Reverse Transfer Capacitance
Cres f = 1MHz
- 4.5 -
Total Gate Charge
Qg VCE = 400V
- 13.5 -
Gate - Emitter Charge
Qge IC = 4A
-4-
Gate - Collector Charge
Qgc VGE = 15V
- 5.5 -
Turn - on Delay Time
Rise Time
td(on) IC = 4A, VCC = 400V
- 17 -
tr VGE = 15V, RG = 50Ω
-
36
-
Turn - off Delay Time
td(off) Tj = 25°C
- 69 -
Fall Time
tf Inductive Load
- 71 -
Turn - on Delay Time
Rise Time
td(on) IC = 4A, VCC = 400V
- 17 -
tr VGE = 15V, RG = 50Ω
-
37
-
Turn - off Delay Time
td(off) Tj = 175°C
- 86 -
Fall Time
tf Inductive Load
- 72 -
IC = 12A, VCC = 520V
Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
VCC 360V
FULL SQUARE
Short Circuit Withstand Time
tsc VGE = 15V
5- -
Tj = 25°C
Unit
pF
nC
ns
ns
-
μs
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/11
2014.05 - Rev.A


3Pages


RGT8BM65D 電子部品, 半導体
RGT8BM65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
12
Tj= 25ºC
10
VGE= 20V
8
VGE= 15V
VGE= 12V
6
VGE= 10V
4
2
0
012345
Collector To Emitter Voltage : VCE[V]
Data Sheet
Fig.6 Typical Output Characteristics
12
Tj= 175ºC
10
8
VGE= 20V
VGE= 15V
VGE= 12V
6
VGE= 10V
4
2
0
012345
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
8
VCE= 10V
7
6
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
VGE= 15V
IC= 8A
3
5
IC= 4A
42
3
2 Tj= 175ºC
1
IC= 2A
1
Tj= 25ºC
0
0 2 4 6 8 10 12
0
25 50 75 100 125 150 175
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
6/11
2014.05 - Rev.A

6 Page



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部品番号部品説明メーカ
RGT8BM65D

650V 4A Field Stop Trench IGBT

ROHM Semiconductor
ROHM Semiconductor
RGT8BM65D

Field Stop Trench IGBT

ROHM Semiconductor
ROHM Semiconductor


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