RB520S-30 - Schottky Barrier Diode

部品番号

RB520S-30

部品説明

Schottky Barrier Diode

メーカ

Galaxy Semi-Conductor

ロゴ

Total 3 pages

		
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BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Low IR=0.1μA.
z High reliability.
z Small surface mounting.
Pb
Lead-free
RB520S-30
APPLICATIONS
z Low current rectification.
ORDERING INFORMATION
Type No.
Marking
RB520S-30
B
SOD-523
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC reverse voltage
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
VR
IO
IFSM
Tj
Tstg
40
200
1
125
-40-125
V
mA
A
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min. Typ.
Max.
0.39
0.55
1
Unit
V
V
μA
Conditions
IF=10mA
IF=100mA
VR=10V
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSKD001
Rev.A
www.galaxycn.com
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部品番号	部品説明	メーカ
RB520S-30	There is a function of Schottky barrier Diode.	JCET
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RB520S-30	There is a function of Schottky Barrier Diode.	MDD

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RB520S-30 PDF Datasheet ( 特性, スペック, ピン接続図 )

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