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PDF PMZB320UPE Data sheet ( Hoja de datos )
| Número de pieza | PMZB320UPE | |
| Descripción | P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMZB320UPE
30 V, P-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Ultra thin package profile of 0.37 mm
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
Min Typ Max Unit
- - -30 V
-8 -
8V
[1] - - -1 A
- 430 510 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.20
0.50
0.10
0.05
0.1002
10 0.01
0
0.25
PMZB320UPE
30 V, P-channel Trench MOSFET
aaa-017064
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-017065
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.20
0.50
0.10
0.05
10 0.02
0.01
0
0.25
1
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB320UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
13. Soldering
Footprint information for reflow soldering
PMZB320UPE
30 V, P-channel Trench MOSFET
1.3
0.7 R0.05 (8x)
SOT883B
0.9
0.25
(2x)
0.3
(2x)
0.4
(2x)
0.3
0.4
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
Fig. 20. Reflow soldering footprint for DFN1006B-3 (SOT883B)
0.6 0.7
sot883b_fr
PMZB320UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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