|
|
PDF PMZB290UNE2 Data sheet ( Hoja de datos )
| Número de pieza | PMZB290UNE2 | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMZB290UNE2 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
PMZB290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• Ultra thin package profile of 0.37 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.2 A
- 270 320 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
PMZB290UNE2
20 V, N-channel Trench MOSFET
103 aaa-017051
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.10
0.05
0.25
10
10-3
0.02
0.01
0
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-017052
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.20
0.50
0.10
10
10-3
0.05
0.02
0.01
0
10-2
0.25
10-1
FR4 PCB, mounting pad for drain = 1 cm2
1
10 102 103
tp (s)
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZB290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
PMZB290UNE2
20 V, N-channel Trench MOSFET
12. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm
SOT883B
L (2x)
2
b (2x)
e
1
e1
L1
3 b1
A
A1
E
D
Dimensions
0 0.5
scale
Unit A(1) A1 b b1 D E e e1 L L1
max 0.40 0.04 0.20 0.55 0.65 1.05
0.30 0.30
mm nom 0.37
0.15 0.50 0.60 1.00 0.35 0.65 0.25 0.25
min 0.34
0.12 0.47 0.55 0.95
0.22 0.22
Note
1. Including plating thickness
Outline
version
References
IEC
JEDEC
JEITA
SOT883B
1 mm
Fig. 19. Package outline DFN1006B-3 (SOT883B)
PMZB290UNE2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 March 2015
European
projection
sot883b_po
Issue date
11-11-02
12-01-03
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMZB290UNE2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMZB290UNE | single N-channel Trench MOSFET | NXP Semiconductors |
| PMZB290UNE2 | N-channel Trench MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |