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Número de pieza | PMZ130UNE | |
Descripción | N-channel Trench MOSFET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMZ130UNE
20 V, N-channel Trench MOSFET
12 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Very fast switching
• Low threshold voltage
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection: 2 kV HBM
• Leadless ultra small package: 1.0 × 0.6 × 0.48 mm
3. Applications
• Relay driver
• High-speed line driver
• Low-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.8 A
- 120 150 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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1 page NXP Semiconductors
PMZ130UNE
20 V, N-channel Trench MOSFET
103 aaa-016012
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.50
102 0.33
0.20
0.10
0.05
0.25
0
10
10-3
0.01
0.02
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-016013
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.33
0.20
0.50
0.10
0.05
0.02
0 0.01
10
10-3
10-2
0.25
10-1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMZ130UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page NXP Semiconductors
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMZ130UNE v.1
20150312
PMZ130UNE
20 V, N-channel Trench MOSFET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMZ130UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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Páginas | Total 14 Páginas | |
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Número de pieza | Descripción | Fabricantes |
PMZ130UNE | N-channel Trench MOSFET | NXP Semiconductors |
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