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PDF PMEG4010AESB Data sheet ( Hoja de datos )
| Número de pieza | PMEG4010AESB | |
| Descripción | low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
6 October 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 40 V
• Low forward voltage, typical: VF = 435 mV
• Low reverse current, typical: IR = 325 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 40 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 40 V
- 435 505 mV
- 30 115 µA
- 325 1250 µA
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1 page  
NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
0.02
0 0.01
PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
IR reverse current
PMEG4010AESB
Product data sheet
Conditions
IR = 10 mA; tp = 300 µs; δ = 0.02 ;
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
All information provided in this document is subject to legal disclaimers.
6 October 2015
Min Typ Max Unit
40 - - V
- 145 - mV
- 205 - mV
- 275 330 mV
- 305 - mV
- 365 425 mV
- 395 - mV
- 435 505 mV
- 10 - µA
- 15 60 µA
- 30 115 µA
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page 
NXP Semiconductors
PMEG4010AESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
15. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
PMEG4010AESB v.3 20151006
Product data sheet
-
Modifications:
• Changed status to "Product data sheet"
PMEG4010AESB v.2 20150430
Preliminary data sheet -
PMEG4010AESB v.1 20141128
Objective data sheet -
Supersedes
PMEG4010AESB v.2
PMEG4010AESB v.1
-
PMEG4010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 October 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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