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PMEG4002ESFのメーカーはNXP Semiconductorsです、この部品の機能は「low VF MEGA Schottky barrier rectifier」です。 |
部品番号 | PMEG4002ESF |
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部品説明 | low VF MEGA Schottky barrier rectifier | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとPMEG4002ESFダウンロード(pdfファイル)リンクがあります。 Total 14 pages
PMEG4002ESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
6 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
• Average forward current IF(AV) ≤ 0.2 A
• Reverse voltage VR ≤ 40 V
• Low forward voltage typ. VF = 315 mV
• Low reverse current typ. IR = 0.24 µA
• Package height typ. 0.3 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
IR
trr
Quick reference data
Parameter
Conditions
average forward
current
δ = 0.5; f = 20 kHz; Tsp ≤ 147 °C;
square wave
δ = 0.5; f = 20 kHz; Tamb ≤ 140 °C;
square wave
reverse voltage
Tj = 25 °C
forward voltage
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
reverse current
VR = 10 V; Tj = 25 °C; pulsed
reverse recovery time IF = 500 mA; IR = 500 mA;
IR(meas) = 100 mA; Tj = 25 °C
Min Typ Max Unit
- - 0.2 A
[1] - - 0.2 A
- - 40 V
- 315 390 mV
- 0.24 2.5 µA
- 1.28 - ns
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
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1 Page NXP Semiconductors
PMEG4002ESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VR reverse voltage
Tj = 25 °C
IF forward current
Tsp ≤ 145 °C; δ = 1
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tsp ≤ 147 °C;
square wave
δ = 0.5; f = 20 kHz; Tamb ≤ 140 °C;
square wave
IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
[1]
Min Max Unit
- 40 V
- 0.28 A
- 0.2 A
- 0.2 A
- 1.2 A
- 3.5 A
- 405 mW
- 660 mW
- 1200 mW
- 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm2 each.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] - - 310 K/W
[1][3] - - 190 K/W
[1][4] - - 105 K/W
[5] - - 40 K/W
PMEG4002ESF
Product data sheet
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
1 cm2 each.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of anode tab.
All information provided in this document is subject to legal disclaimers.
6 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
3 / 14
3Pages NXP Semiconductors
PMEG4002ESF
40 V, 0.2 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
IR
Cd
trr
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
reverse current
diode capacitance
reverse recovery time
Conditions
IR = 100 µA; tp = 300 µs; δ = 0.02;
Tj = 25 °C
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 10 V; Tj = 25 °C; pulsed
VR = 40 V; Tj = 25 °C; pulsed
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
IF = 500 mA; IR = 500 mA;
IR(meas) = 100 mA; Tj = 25 °C
Min Typ Max Unit
40 - - V
- 185 255 mV
- 250 320 mV
- 315 390 mV
- 440 510 mV
- 525 600 mV
- 0.24 2.5 µA
- 1.2 6.5 µA
- 17 - pF
- 7 - pF
- 1.28 - ns
PMEG4002ESF
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
6 / 14
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部品番号 | 部品説明 | メーカ |
PMEG4002ESF | low VF MEGA Schottky barrier rectifier | NXP Semiconductors |