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PDF CTLSH1-50M832DS Data sheet ( Hoja de datos )
| Número de pieza | CTLSH1-50M832DS | |
| Descripción | SILICON SCHOTTKY RECTIFIERS | |
| Fabricantes | Central Semiconductor | |
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CTLSH1-50M832DS
SURFACE MOUNT
DUAL, HIGH CURRENT
LOW VF
SILICON SCHOTTKY RECTIFIERS
TLM832DS CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLSH1-50M832DS
Dual, Isolated, Low VF Silicon Schottky rectifiers are
designed for applications where small size and operational
efficiency are the prime requirements. With a maximum
power dissipation of 1.65W, and a very small package
footprint (approximately equal to the SOT-23), this
leadless package design is capable of dissipating up to
4 times the power of similar devices in comparable sized
surface mount packages.
MARKING CODE: CFX
APPLICATIONS:
• DC - DC Converters
• Reverse Battery Protection
• Battery Powered Portable Equipment
FEATURES:
• High Current (IF=1.0A)
• Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A)
• High Thermal Efficiency
• Small TLM 3x2mm case
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp<1.0ms
Peak Forward Surge Current, tp=8.0ms
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
ΘJA
50
1.0
3.5
10
1.65
-65 to +150
75.8
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IR VR=5.0V
10
IR VR=8.0V
20
IR VR=15V
50
IR VR=50V
0.5
IR VR=50V, TA=100°C
50
BVR
IR=100μA
50
VF IF=10mA
0.29
VF IF=100mA
0.36
VF IF=500mA
0.45
VF IF=1.0A
0.55
CJ VR=4.0V, f=1.0MHz
50
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 54mm2
UNITS
V
A
A
A
W
°C
°C/W
UNITS
μA
μA
μA
mA
mA
V
V
V
V
V
pF
R1 (23-September 2011)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CTLSH1-50M832DS.PDF ] | |
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