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PDF AP18P10GK-HF Data sheet ( Hoja de datos )

Número de pieza AP18P10GK-HF
Descripción P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP18P10GK-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP18P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
BVDSS
RDS(ON)
ID
Description
AP18P10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
G
-100V
160mΩ
-3.1A
D
S
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
Symbol
Parameter
Rating
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
-100
+20
-3.1
-2.5
-10
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
/W
1
201508052

1 page




AP18P10GK-HF pdf
MARKING INFORMATION
AP18P10GK-HF
18P10GK
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

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