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AP16N50P-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP16N50P-HF |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP16N50P-HFダウンロード(pdfファイル)リンクがあります。 Total 5 pages
Advanced Power
Electronics Corp.
AP16N50P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP16N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON)
ID
500V
0.4Ω
16A
G
DS
TO-220(P)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS Gate-Source Voltage
+30 V
ID@TC=25℃
ID@TC=100℃
IDM
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
16 A
11 A
60 A
PD@TC=25℃
EAS
Total Power Dissipation
Single Pulse Avalanche Energy3
173.6
75
W
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.72
62
Units
℃/W
℃/W
1
201501133
1 Page 30
T C =25 o C
20
10
16 V
12 V
10V
7.0V
V G = 6.0 V
16
T C =150 o C
12
8
4
AP16N50P-HF
16V
12V
10V
7.0V
V G = 6.0V
0
0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
20
Fig 1. Typical Output Characteristics
0
0 4 8 12 16 20 24 28
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
.1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
2.8
I D =6.5A
V G =10V
2.4
2.0
1.6
1.2
0.8
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
150
8
T j =150 o C
6
T j =25 o C
1.3
1.1
4 0.9
2 0.7
0
0 0.2 0.4 0.6 0.8 1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0.5
-50
0
50 100 150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ AP16N50P-HF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP16N50P-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |