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Número de pieza | AP15TP1R0YT | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AP15TP1R0YT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP15TP1R0YT
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
G
D BVDSS
-150V
RDS(ON)
1Ω
ID3 -1.2A
S
Description
AP15TP1R0 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The PMPAK ® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
-150
+25
-1.2
-1
-6
V
V
A
A
A
PD@TA=25℃
EAS
TSTG
TJ
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
3.13
6
-55 to 150
-55 to 150
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
40
Unit
℃/W
℃/W
1
201504101
1 page AP15TP1R0YT
2
I D = -1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
1600
T j =25 o C
1400
1200
1000
.-6.0V
V GS = -10V
800
600
400
012345
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
4
3
2
1
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet AP15TP1R0YT.PDF ] |
Número de pieza | Descripción | Fabricantes |
AP15TP1R0Y | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP15TP1R0YT | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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