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AP10P10GK-HF の電気的特性と機能

AP10P10GK-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「P-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP10P10GK-HF
部品説明 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP10P10GK-HF Datasheet, AP10P10GK-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP10P10GK-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D
SOT-223
S
D
G
Description
AP10P10 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and
fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
BVDSS
RDS(ON)
ID
G
-100V
500mΩ
- 1.65A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 100
+20
- 1.65
-1.3
-6
2.78
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
Unit
/W
1
201211021

1 Page





AP10P10GK-HF pdf, ピン配列
8
T A =25 o C
6
4
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
2
0
0246
-V DS , Drain-to-Source Voltage (V)
8
Fig 1. Typical Output Characteristics
440
I D = -1 A
T A =25 o C
420
400
380
360
340
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
4
3
T j =150 o C
T j =25 o C
2
1
0
0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
AP10P10GK-HF
4
T A =150 o C
3
2
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
1
0
02468
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D = -1.5 A
V G =-10V
2.0
1.6
1.2
20
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
150
1.2
0.8
0.4
0.0
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

Link :


部品番号部品説明メーカ
AP10P10GK-HF

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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