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13N60のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | 13N60 |
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部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | nELL | ||
ロゴ | |||
このページの下部にプレビューと13N60ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, starting TJ = 25°C.
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Page 1 of 8
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)
1 Page SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 6.5A, VGS = 0V
1.2 V
IS(ISD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
13
A
39
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
S (Source)
ISD = 6.5A, VGS = 0V,
dIF/dt = 100A/µs
280 ns
3.5 μC
ORDERING INFORMATION SCHEME
Current rating, ID
13 = 13A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
13 N 60 A
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
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Page 3 of 8
3Pages SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
Fig.7a Maximum safe operating area
for 13N60A
100
Operation in This Area is Limited by RDS(ON)
10µs
100µs
10
1ms
10ms
1 DC
0.1 Note:
0.01
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.1 1 10 100 1000
Drain-to-Source voltage, VDS (V)
Fig.7b Maximum safe operating area
for 13N60AF
100
Operation in This Area is Limited by RDS(ON)
10µs
100µs
10
1ms
10ms
1
DC
0.1
0.01
0.1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
1 10 100
1000
Drain-to-Source voltage, VDS (V)
Fig.8a Transient thermal response curve for 13N60A
2
1
Thermal response, Rth(j-c)
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
(Single Pulse)
0.01
10-5
10-4
10-3
Notes:
1.Rth(j-c)(t)=1.07°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-TC=PDM×Rth(j-c)(t)
PDM
t1
T2
10-2
10-1
Rectangular Pulse Duration, t1 (sec)
Fig.8b Transient thermal response curve for 13N60AF
5
D = 0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
(Single Pulse)
0.01
10-5
10-4
10-3
10-2
10-1
PDM
t1
T2
Notes:
1.Rth(j-c)(t)=3.7°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-TC=P ×DM Rth(j-c)(t)
100 101 102
Rectangular Pulse Duration, t1 (sec)
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Page 6 of 8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
13N60 | N-Channel Power MOSFET / Transistor | nELL |
13N60A | N-Channel Power MOSFET / Transistor | nELL |
13N60AF | N-Channel Power MOSFET / Transistor | nELL |
13N60M2 | N-CHANNEL POWER MOSFET | STMicroelectronics |