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13N60 の電気的特性と機能

13N60のメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 13N60
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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13N60 Datasheet, 13N60 PDF,ピン配置, 機能
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(13N60A)
GDS
TO-220F
(13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
13
600
0.26 @ VGS = 10V
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS
dv/dt
PD
Single pulse avalanche energy (Note 2)
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB
TO-220F
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
VALUE
600
600
±30
13
8.2
39
4.3
1.2
235
100
20
116(0.93)
34(0.27)
-55 to 150
-55 to 150
300
10 (1.1)
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS=4.3A, VDD=50V, RGS=25Ω, starting TJ = 25 °C.
3.ISD ≤ 13A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ = 25°C.
www.nellsemi.com
Page 1 of 8
UNIT
V
A
mJ
V /ns
W(W/°C)
ºC
lbf.in (N.m)

1 Page





13N60 pdf, ピン配列
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 6.5A, VGS = 0V
1.2 V
IS(ISD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
13
A
39
trr Reverse recovery time
Qrr Reverse recovery charge
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
S (Source)
ISD = 6.5A, VGS = 0V,
dIF/dt = 100A/µs
280 ns
3.5 μC
ORDERING INFORMATION SCHEME
Current rating, ID
13 = 13A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
13 N 60 A
TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
Fig.1B Peak diode recovery dv/dt waverforms
D.U.T.
+
-
+
VDS
-
L
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* lSD controlled by pulse period
* D.U.T.-Device under test
VDD
VGS
(Driver)
lSD
(D.U.T)
VDS
(D.U.T)
P.W.
Period
D= P.W.
Period
VGS=10V
lFM, Body Diode forward current
di/dt
lRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
www.nellsemi.com
Page 3 of 8


3Pages


13N60 電子部品, 半導体
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
Fig.7a Maximum safe operating area
for 13N60A
100
Operation in This Area is Limited by RDS(ON)
10µs
100µs
10
1ms
10ms
1 DC
0.1 Note:
0.01
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
0.1 1 10 100 1000
Drain-to-Source voltage, VDS (V)
Fig.7b Maximum safe operating area
for 13N60AF
100
Operation in This Area is Limited by RDS(ON)
10µs
100µs
10
1ms
10ms
1
DC
0.1
0.01
0.1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
1 10 100
1000
Drain-to-Source voltage, VDS (V)
Fig.8a Transient thermal response curve for 13N60A
2
1
Thermal response, Rth(j-c)
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
(Single Pulse)
0.01
10-5
10-4
10-3
Notes:
1.Rth(j-c)(t)=1.07°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-TC=PDM×Rth(j-c)(t)
PDM
t1
T2
10-2
10-1
Rectangular Pulse Duration, t1 (sec)
Fig.8b Transient thermal response curve for 13N60AF
5
D = 0.5
1
0.2
0.1
0.05
0.1 0.02
0.01
(Single Pulse)
0.01
10-5
10-4
10-3
10-2
10-1
PDM
t1
T2
Notes:
1.Rth(j-c)(t)=3.7°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-TC=P ×DM Rth(j-c)(t)
100 101 102
Rectangular Pulse Duration, t1 (sec)
www.nellsemi.com
Page 6 of 8

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共有リンク

Link :


部品番号部品説明メーカ
13N60

N-Channel Power MOSFET / Transistor

nELL
nELL
13N60A

N-Channel Power MOSFET / Transistor

nELL
nELL
13N60AF

N-Channel Power MOSFET / Transistor

nELL
nELL
13N60M2

N-CHANNEL POWER MOSFET

STMicroelectronics
STMicroelectronics


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