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PDF JST131 Data sheet ( Hoja de datos )
| Número de pieza | JST131 | |
| Descripción | TRIACs | |
| Fabricantes | JIEJIE | |
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JIEJIE MICROELECTRONICS CO. , Ltd
JST131 Series 1A TRIACs
Rev.3.0
DESCRIPTION:
JST131 series triacs with low holding and
latching current are especially recommended
for use on middle and small resistance type
power load.
12 3
SOT-89
12 3
SOT-223
MAIN FEATURES
Symbol
Value
IT(RMS)
ITSM
1
16
VTM 1.7
Unit
A
A
V
1 32
T2(2)
TO-92
T1(1)
G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage (Tj=25℃)
Repetitive peak reverse voltage (Tj=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-92 (TC=51℃)
RMS on-state current SOT-89/ SOT-223
(TC=70℃)
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
I2t value for fusing (tp=10ms)
Critical rate of rise of on-state current
(IG=2×IGT)
Peak gate current
Average gate power dissipation
Symbol
Tstg
Tj
VDRM
VRRM
VDSM
VRSM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
Value
-40 - 150
-40 - 125
600/800
600/800
VDRM + 100
VRRM + 100
1
16
1.28
10
2
0.5
Unit
℃
℃
V
V
V
V
A
A
A2s
A/μs
A
W
TEL：+86-513-83639777
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http://www.jjwdz.com
1 page  
JST131 Series
JieJie Microelectronics CO. , Ltd
FIG.3: Surge peak on-state current versus
number of cycles
ITSM (A)
17.5
15
t=20ms
One cycle
12.5
10
7.5
5
2.5
0 Number of cycles
1 10 100
1000
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms and
corresponding value of I2 t (dI/dt < 10A/μs)
ITSM (A), I2t (A2s)
400
100 dI/dt
ITSM
10
FIG.4: On-state characteristics (maximum
values)
ITM (A)
20
10
Tj=Tjmax
1
Tj=25℃
0.1 VTM (V)
01 23 45
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
2.5
IGT4
2.0
IH&IL
1.5
1.0
1
0.01
tp(ms)
I2 t
0.1 1
10 20
0.5
Tj(℃)
IGT1-3
0.0
-40 -20 0 20 40 60 80 100 120 140
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 20-May-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL：+86-513-83639777
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http://www.jjwdz.com
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