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ES2D の電気的特性と機能
ES2DのメーカーはVishayです、この部品の機能は「Surface Mount Ultrafast Plastic Rectifier」です。 |
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製品の詳細 ( Datasheet PDF )
部品番号 ES2D |
部品説明 Surface Mount Ultrafast Plastic Rectifier |
メーカ Vishay |
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www.vishay.com
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
2.0 A
50 V, 100 V, 150 V, 200 V
IFSM
50 A
trr 20 ns
VF
TJ max.
0.90 V
150 °C
Package
DO-214AA (SMB)
Diode variations
Single die
FEATURES
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
ES2A
Device marking code
EA
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TL = 110 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
50
35
50
Operating junction and storage temperature range
TJ, TSTG
ES2B
ES2C
EB EC
100 150
70 105
100 150
2.0
50
-55 to +150
ES2D
ED
200
140
200
UNIT
V
V
V
A
A
°C
Revision: 30-Oct-13
1 Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page


www.vishay.com
ES2A, ES2B, ES2C, ES2D
Vishay General Semiconductor
100
10 TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
0.01
0.2
TJ = 25 °C
0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 3 - Typical Instantaneous Forward Characteristics
10 000
1000
100
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
1 TJ = 25 °C
0.1
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
60
TJ = 25 °C
f = 1.0 MHz
50 Vsig = 50 mVp-p
40
30
20
10
0
0.1 1 10 100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.085 (2.159) MAX.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.220 (5.59) REF.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 30-Oct-13
3 Document Number: 88587
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages

合計 : 4 ページ |
PDF ダウンロード [ ES2D データシート.PDF ] |
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