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ES1JL の電気的特性と機能
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ES1JLのメーカーはTaiwan Semiconductorです、この部品の機能は「Surface Mount Super Fast Rectifiers」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 ES1JL |
| 部品説明 Surface Mount Super Fast Rectifiers |
| メーカ Taiwan Semiconductor |
ロゴ |
このページの下部にプレビューとES1JLダウンロード（pdfファイル）リンクがあります。 Total 4 pages |
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CREAT BY ART
Surface Mount Super Fast Rectifiers
ES1AL thru ES1JL
Taiwan Semiconductor
FEATURES
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: Sub SMA
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.019 g (approximately)
Sub SMA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
ES ES ES ES ES ES
SYMBOL
1AL 1BL 1CL 1DL 1FL 1GL
Marking code
EAL EBL ECL EDL EFL EGL
Maximum repetitive peak reverse voltage
VRRM
50 100 150 200 300 400
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
35 70 105 140 210 280
50 100 150 200 300 400
Maximum average forward rectified current
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
ES
1HL
EHL
500
350
500
ES
1JL
EJL
600
420
600
Maximum instantaneous forward voltage (Note 1)
@1A
VF 0.95
1.3 1.7
Maximum reverse current @ rated VR TJ=25 ℃
TJ=125 ℃
Typical junction capacitance (Note 2)
IR
Cj
Maximum reverse recovery time (Note 3)
Trr
Typical thermal resistance
RθJL
RθJA
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
TJ
TSTG
Note 2: Measured at 1 MHz and Applied VR=4.0 Volts.
Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
5
100
10
35
35
85
- 55 to +150
- 55 to +150
8
UNIT
V
V
V
A
A
V
μA
pF
ns
OC/W
OC
OC
Document Number: DS_D1405035
Version: I14
1 Page
FIG. 5 TYPICAL JUNCTION CAPACITANCE
14
12
10 ES1AL-ES1DL
8
6
4 f=1.0MHz
Vsig=50mVp-p
2
ES1FL-ES1JL
0
1 10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
ES1AL thru ES1JL
Taiwan Semiconductor
DIM.
B
C
D
E
F
G
H
I
J
Unit (mm)
Min Max
1.70 1.90
2.70 2.90
0.16 0.30
1.23 1.43
0.80 1.20
3.40 3.80
2.45 2.60
0.35 0.85
0.00 0.10
Unit (inch)
Min
0.067
Max
0.075
0.106 0.114
0.006 0.012
0.048 0.056
0.031 0.047
0.134 0.150
0.096 0.102
0.014 0.033
0.000 0.004
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1405035
Unit (mm)
1.4
1.2
3.1
1.9
4.3
Unit (inch)
0.055
0.047
0.122
0.075
0.169
Version: I14
3Pages
合計 : 4 ページ |
| PDF ダウンロード [ ES1JL データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| ES1J | 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts |  Micro Commercial Components |
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| ES1J | SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 - 600 Volts CURRENT - 1.0 Amperes |  Surge Components |