71 GHz to 76 GHz, E-Band Power Amplifier
With Power Detector
Gain: 21.5 dB typical
Output power for 1 dB compression (P1dB): 25 dBm typical
Saturated output power (PSAT): 26.5 dBm typical
Output third-order intercept (OIP3): 30 dBm typical
Input return loss: 12 dB typical
Output return loss: 12 dB typical
DC supply: 4 V at 450 mA
No external matching required
Die size: 3.599 mm × 1.999 mm × 0.05 mm
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
The HMC7543 is an integrated E-band gallium arsenide
(GaAs), pseudomorphic (pHEMT), monolithic microwave
integrated circuit (MMIC), medium power amplifier with a
temperature compensated on-chip power detector that operates
from 71 GHz to 76 GHz. The HMC7543 provides 21.5 dB of
gain, 25 dBm of output power at 1 dB compression, and 26.5 dBm
of saturated output power at 20% power added efficiency (PAE)
from a 4 V power supply. The HMC7543 exhibits excellent
linearity and is optimized for E-band communications and high
capacity wireless backhaul radio systems. The amplifier configura-
tion and high gain make it an excellent candidate for last stage
signal amplification before the antenna. All data is taken with
the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil
thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM
21 20 19
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TA = 25°C, VDDx = 4 V, IDD = 450 mA, unless otherwise noted.
RF Frequency Range
Gain Variation over Temperature
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (PSAT)
Output Third-Order Intercept (OIP3) at Maximum Gain1
Input Return Loss
Output Return Loss
Total Supply Current (IDD)2
1 Data taken at output power (POUT) = 12 dBm per tone, 1 MHz spacing.
2 Adjust VGGx from −2 V to 0 V to achieve the total drain current (IDD) = 450 mA.
Min Typ Max Unit
71 76 GHz
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