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HMC7543 の電気的特性と機能
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HMC7543のメーカーはAnalog Devicesです、この部品の機能は「E-Band Power Amplifier」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 HMC7543 |
| 部品説明 E-Band Power Amplifier |
| メーカ Analog Devices |
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Data Sheet
71 GHz to 76 GHz, E-Band Power Amplifier
With Power Detector
HMC7543
FEATURES
Gain: 21.5 dB typical
Output power for 1 dB compression (P1dB): 25 dBm typical
Saturated output power (PSAT): 26.5 dBm typical
Output third-order intercept (OIP3): 30 dBm typical
Input return loss: 12 dB typical
Output return loss: 12 dB typical
DC supply: 4 V at 450 mA
No external matching required
Die size: 3.599 mm × 1.999 mm × 0.05 mm
APPLICATIONS
E-band communication systems
High capacity wireless backhaul radio systems
Test and measurement
GENERAL DESCRIPTION
The HMC7543 is an integrated E-band gallium arsenide
(GaAs), pseudomorphic (pHEMT), monolithic microwave
integrated circuit (MMIC), medium power amplifier with a
temperature compensated on-chip power detector that operates
from 71 GHz to 76 GHz. The HMC7543 provides 21.5 dB of
gain, 25 dBm of output power at 1 dB compression, and 26.5 dBm
of saturated output power at 20% power added efficiency (PAE)
from a 4 V power supply. The HMC7543 exhibits excellent
linearity and is optimized for E-band communications and high
capacity wireless backhaul radio systems. The amplifier configura-
tion and high gain make it an excellent candidate for last stage
signal amplification before the antenna. All data is taken with
the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.5 mil
thick × 7 mil long ribbon on each port.
FUNCTIONAL BLOCK DIAGRAM
4 567
VDD1
VDD2
89
VDD3
10 11
VDD4
3
RFIN
2
1
HMC7543
RFOUT
12
13
14
VGG1
VGG2
25 24
23 22
VGG3
21 20 19
Figure 1.
VGG4
18
VREF
17 16
VDET
15
Rev. A
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Technical Support
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1 Page
Data Sheet
SPECIFICATIONS
TA = 25°C, VDDx = 4 V, IDD = 450 mA, unless otherwise noted.
Table 1.
Parameter
OPERATING CONDITIONS
RF Frequency Range
PERFORMANCE
Gain
Gain Variation over Temperature
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (PSAT)
Output Third-Order Intercept (OIP3) at Maximum Gain1
Input Return Loss
Output Return Loss
POWER SUPPLY
Total Supply Current (IDD)2
1 Data taken at output power (POUT) = 12 dBm per tone, 1 MHz spacing.
2 Adjust VGGx from −2 V to 0 V to achieve the total drain current (IDD) = 450 mA.
HMC7543
Min Typ Max Unit
71 76 GHz
19 21.5
0.02
22.5 25
26.5
30
12
12
dB
dB/°C
dBm
dBm
dBm
dB
dB
450 mA
Rev. A | Page 3 of 16
3Pages
HMC7543
INTERFACE SCHEMATICS
GND
Figure 3. GND Interface
RFIN
Figure 4. RFIN Interface
VDD1 TO VDD4
Figure 5. VDD1 to VDD4 Interface
Data Sheet
RFOUT
Figure 6. RFOUT Interface
VREF,VDET
Figure 7. VDET, VREF Interface
VGG1 TO VGG4
Figure 8. VGG4 to VGG1 Interface
Rev. A | Page 6 of 16
6 Page
合計 : 16 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| HMC7543 | E-Band Power Amplifier | Analog Devices |
| HMC7545 | 14.2 Gbps Asynchronous 4-Channel Signal Conditioner | Analog Devices |
| HMC754S8GE | GaAs HBT HIGH LINEARITY PUSH-PULL AMPLIFIER |  Hittite Microwave Corporation |