|
UPA810T の電気的特性と機能
|
UPA810TのメーカーはCELです、この部品の機能は「NPN SILICON HIGH FREQUENCY TRANSISTOR」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 UPA810T |
| 部品説明 NPN SILICON HIGH FREQUENCY TRANSISTOR |
| メーカ CEL |
ロゴ |
このページの下部にプレビューとUPA810Tダウンロード（pdfファイル）リンクがあります。 Total 2 pages |
No Preview Available ! |
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
• HIGH GAIN:
|S21E|2 = 9.0 dB TYP at 1 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
• HIGH COLLECTOR CURRENT: 100 mA
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0.65
2.0 ± 0.2
1.3
1
2
6
0.2 (All Leads)
5
DESCRIPTION
The UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
34
0.9 ± 0.1
0.7
0.15 - 0.05
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
0 ~ 0.1
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA810T
S06
SYMBOLS
ICBO
IEBO
hFE1
fT
Cre2
|S21E|2
NF
hFE1/hFE2
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 10 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Forward Current Gain at VCE = 3 V, IC = 7 mA
Gain Bandwidth at VCE = 3 V, IC = 7 mA
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
hFE Ratio: hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
UNITS
μA
μA
GHz
pF
dB
dB
MIN
70
3.0
7
0.85
TYP
120
4.5
0.7
9
1.2
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
MAX
1.0
1.0
250
1.5
2.5
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
1 Page
合計 : 2 ページ |
| PDF ダウンロード [ UPA810T データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| UPA810 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |  NEC |
| UPA810T | NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL |
| UPA810TC | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | NEC |