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Si7252DP の電気的特性と機能
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Si7252DPのメーカーはVishayです、この部品の機能は「Dual N-Channel 100 V (D-S) MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 Si7252DP |
| 部品説明 Dual N-Channel 100 V (D-S) MOSFET |
| メーカ Vishay |
ロゴ |
このページの下部にプレビューとSi7252DPダウンロード（pdfファイル）リンクがあります。 Total 13 pages |
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New Product
Si7252DP
Vishay Siliconix
Dual N-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.017 at VGS = 10 V
100 0.018 at VGS = 7.5 V
0.020 at VGS = 6 V
ID (A)a
36.7
35.7
33.9
Qg (Typ.)
12.2 nC
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6 D2
5
S1
1
G1
2
5.15 mm
S2
3 G2
4
Bottom View
Ordering Information:
Si7252DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary Side Switching
• Synchronous Rectification
• DC/AC Inverters
D1
D2
G1
N-Channel MOSFET
S1
G2
N-Channel MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 85 °C
TA = 25 °C
TA = 85 °C
ID
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 85 °C
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
100
± 20
36.7
29.2
10.1b, c
8b, c
80
38
2.9b, c
20
20
46
29
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
2.2
35
°C/W
2.7
Notes:
a. Based on TC = 25 °C
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 85 °C/W.
Document Number: 62634
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
VGS = 10 V thru 5 V
64
80
64
Si7252DP
Vishay Siliconix
48
32
16
0
0
0.0220
VGS = 4 V
VGS = 3 V
12345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
48
TC = 25 °C
32
16
TC = 125 °C
0
0.0
1.6
3.2
TC = - 55 °C
4.8 6.4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1600
8.0
0.0200
0.0180
0.0160
0.0140
VGS = 4.5 V
VGS = 7.5 V
VGS = 10 V
0.0120
0
16 32 48 64 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1280
Ciss
960
Coss
640
320
Crss
0
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
Capacitance
100
10
ID = 10 A
8 VDS = 50 V
6 VDS = 25 V
4
VDS = 75 V
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
2.0
ID = 15 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62634
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages
New Product
Si7252DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01 0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62634.
Document Number: 62634
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-2186-Rev. A, 10-Sep-12
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page
合計 : 13 ページ |
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| 部品番号 | 部品説明 | メーカ |
| Si7252DP | Dual N-Channel 100 V (D-S) MOSFET | Vishay |