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BUK752R7-30B の電気的特性と機能
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BUK752R7-30BのメーカーはNXP Semiconductorsです、この部品の機能は「N-channel TrenchMOS standard level FET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 BUK752R7-30B |
| 部品説明 N-channel TrenchMOS standard level FET |
| メーカ NXP Semiconductors |
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BUK752R7-30B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 June 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
- - 30 V
ID
drain current
VGS = 10 V; Tmb = 25 °C;
[1] - - 75 A
see Figure 1; see Figure 3
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
- - 300 W
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C; - 2.3 2.7 mΩ
see Figure 11; see Figure 12
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 75 A; Vsup ≤ 30 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
- - 2.3 J
QGD
gate-drain charge VGS = 10 V; ID = 25 A; VDS = 24 V; - 29 - nC
Tj = 25 °C; see Figure 13
[1] Continuous current is limited by package.
1 Page
NXP Semiconductors
BUK752R7-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
Tmb = 25 °C; VGS = 10 V; see Figure 1;
see Figure 3
Min Typ Max Unit
- - 30 V
- - 30 V
-20 -
20 V
[1] - - 241 A
Tmb = 100 °C; VGS = 10 V; see Figure 1 [2] - - 75 A
Tmb = 25 °C; VGS = 10 V; see Figure 1; [2] - - 75 A
see Figure 3
IDM
peak drain current
Tmb = 25 °C; tp ≤ 10 µs; pulsed;
see Figure 3
- - 967 A
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25 °C; see Figure 2
--
-55 -
-55 -
300 W
175 °C
175 °C
IS
source current
Tmb = 25 °C
[1] - - 241 A
[2] - - 75 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C
- - 967 A
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 2.3 J
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
BUK752R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
3 of 14
3Pages
NXP Semiconductors
BUK752R7-30B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
LS internal source
inductance
Source-drain diode
VSD source-drain voltage
trr reverse recovery time
Qr recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 0 V; VGS = 20 V; Tj = 25 °C
VDS = 0 V; VGS = -20 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
from drain lead 6 mm from package to
center of die ; Tj = 25 °C
from contact screw on mounting base to
center of die ; Tj = 25 °C
from source lead to source bond pad ;
Tj = 25 °C
IS = 40 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 20 V; Tj = 25 °C
Min Typ Max Unit
30 - - V
27 - - V
234V
1- - V
- - 4.4 V
- - 500 µA
-
0.02 1
µA
- 2 100 nA
- 2 100 nA
- - 5.1 mΩ
- 2.3 2.7 mΩ
- 91 - nC
- 19 - nC
- 29 - nC
- 4659 6212 pF
- 1691 2029 pF
- 622 852 pF
- 31 - ns
- 107 - ns
- 113 - ns
- 118 - ns
- 4.5 - nH
- 3.5 - nH
- 7.5 - nH
- 0.85 1.2 V
- 88 - ns
- 132 - nC
BUK752R7-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 June 2010
© NXP B.V. 2010. All rights reserved.
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| 部品番号 | 部品説明 | メーカ |
| BUK752R7-30B | N-channel TrenchMOS standard level FET | NXP Semiconductors |