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STF26NM60 の電気的特性と機能

STF26NM60のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
STF26NM60
部品説明
N-channel Power MOSFET
メーカ
STMicroelectronics
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STMicroelectronics ロゴ 




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STF26NM60 Datasheet, STF26NM60 PDF,ピン配置, 機能
STB26NM60N, STF26NM60, STI26NM60N,
STP26NM60N, STW26NM60N
N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET
in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
Datasheet — production data
Features
TAB
TAB
Type
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
VDSS
600 V
600 V
600 V
600 V
600 V
RDS(on)
max
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
< 0.165 Ω
ID
20 A
20 A
20 A
20 A
20 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
3
2
1
TO-220FP
TAB
123
I²PAK
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Application
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET applies a new vertical structure to the
company’s strip layout to yield a device with one
of the world’s lowest on-resistance and gate
charge, making it suitable for the most demanding
high-efficiency converters.
Figure 1. Internal schematic diagram
$4!" 
'
3
3#
Table 1. Device summary
Order codes
STB26NM60N
STF26NM60N
STI26NM60N
STP26NM60N
STW26NM60N
Marking
26NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2012
This is information on a product in full production.
Doc ID 15642 Rev 4
1/23
www.st.com
23
Free Datasheet http://www.Datasheet4U.com

1 Page





STF26NM60 pdf, ピン配列
STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, I²PAK,
TO-220, TO-247
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source voltage
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
20
12.6
80
140
1.12
600
± 25
15
20(1)
12.6 (1)
80(1)
35
0.28
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;TC=25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 20 A, di/dt 400 A/µs, VDSpeak V(BR)DSS, VDD = 80% V(BR)DSS
2500
–55 to 150
150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-247 TO-220 I²PAK D²PAK TO-220FP
Rthj-case
Thermal resistance junction-
case max
Rthj-amb
Thermal resistance junction-
ambient max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
50
0.89
62.5
3.6 °C/W
62.5 °C/W
30 °C/W
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.
Doc ID 15642 Rev 4
3/23
Free Datasheet http://www.Datasheet4U.com


3Pages


STF26NM60 電子部品, 半導体
Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 20 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
20
80
1.5
370
5.8
31.6
450
7.5
32.5
A
A
V
ns
µC
A
ns
µC
A
6/23 Doc ID 15642 Rev 4
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 23 ページ
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部品番号部品説明メーカ
STF26NM60

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics
STF26NM60N-H

N-channel MOSFET

STMicroelectronics
STMicroelectronics

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