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NE02133 の電気的特性と機能

NE02133のメーカーはCELです、この部品の機能は「NPN SILICON HIGH FREQUENCY TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号
NE02133
部品説明
NPN SILICON HIGH FREQUENCY TRANSISTOR
メーカ
CEL
ロゴ

CEL ロゴ 




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NE02133 Datasheet, NE02133 PDF,ピン配置, 機能
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC gold,
platinum, titanium, and platinum-silicide metallization system to
provide the utmost in reliability. NE02107 is available in both
common-base and common-emitter configurations and has
been qualified for high-reliability space applications.
NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 5 mA
500 1.2 18.60
1000
1.5 13.82
1500
2.0 11.83
2000
2.4 9.36
2500
2.6 7.82
3000
3.6 7.51
3500
3.7 6.31
VCE = 10 V, IC = 20 mA
500 1.8 21.32
1000
1.9 16.15
1500
2.4 13.50
2000
2.9 11.02
2500
3.2 9.12
3000
3.9 8.10
3500
4.3 6.48
ΓOPT
MAG ANG
.36 69
.31 124
.50 165
.44 -175
.52 -161
.68 -141
.71 -139
.16 149
.33 169
.46 -179
.53 -167
.57 -154
.62 -139
.67 -134
Rn/50
.14
.12
.05
.06
.10
.14
.21
.15
.13
.09
.08
.14
.27
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
PLEASE NOTE:
The following part numbers from this datasheet are nonpromotive:
NE02100
NE02133
NE02139
The following part numbers from this datasheet are discontinued:
NE02107
NE02135
Please call sales office for details.
California Eastern Laboratories
Free Datasheet http://www.Datasheet4U.com

1 Page





NE02133 pdf, ピン配列
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
25
VCEO Collector to Emitter Voltage V
122
VEBO Emitter to Base Voltage
V
3
IC Collector Current
mA 70
TJ Junction Temperature
°C 2003
TSTG Storage Temperature
°C -65 to +2004
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Typical BVCER = 25 V for R 300 .
3. Maximum TJ for the NE02133 and NE02139
is +150°C.
4. Maximum storage temperature for the NE02135 is -65 to
+150°C. Maximum storage temperature for the
NE02133 and NE02139 is -55 to 150°C.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE02133
DC POWER DERATING CURVES
400
1. Mounted On Al2O3 Substrate
(32x21x10mm) And Encapsulated
300
In Epoxy Resin (RTH (J-A) = 267˚C/W
1
2. Mounted On Al2O3 Substrate
(18x29x0.8mm) RTH(J-A) = 370˚C/W
3. Mounted On Al2O3 Substrate
(10x15x0.8mm) RTH(J-A) = 490˚C/W
200 2 4. Free Air, RTH(J-A) = 666˚C/W
3
4
100
0
0 50 100 150 200
Ambient Temperature, TA (°C)
VOLTAGE CURRENT
CHARACTERISTICS
70
50 VCE = 10 V
30
20
10
7
5
3
2
1
0.7
0.5
0.6 0.7
0.8 0.9
Base to Emitter Voltage, VBE (V)
NE021 SERIES
NE02100, NE02107
DC POWER DERATING CURVES
800
NE02100
RTH(J-C) = 70˚C/W
NE02107
600 RTH(J-C) = 90˚C/W
RTH (J-A) =
400 500˚C/W
NE02107
200
0
0
50 100 150
Ambient Temperature, TA (°C)
200
NE02135
DC POWER DERATING CURVES
800
WITH INFINITE
600 HEAT SINK
RTH(J-C) = 120˚ C/W
MOUNTED ON AI2O3
400 SUBSTRATE
(20X50X0.6") RTH(J-A) =
190˚C/W
200
FREE AIR
RTH(J-A) = 600˚C/W
0
0 50 100 150
Ambient Temperature, TA (°C)
200
DEVICE CAPACITANCE
2
f =1 MHz
IE = 0
1
CEB
0.7
CCB
0.5
0.3
0
0.5 1 2 3 5 7 10
20 30
Collector to Base Voltage, VCB (V)
Emitter to Base Voltage, VEB (V)
Free Datasheet http://www.Datasheet4U.com


3Pages


NE02133 電子部品, 半導体
NE021 SERIES
TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 25°C)
j50
j25 S11
4 GHz
j10
S11
0.1 GHz
0 10
25
50 100
-j10
-j25
S22
4 GHz
-j50
j100
S22
0.1 GHz 0
Coordinates in Ohms
Frequency in GHz
-j100 (VCB = 10 V, IC = 20 mA)
120˚
150˚
90˚
S12
4 GHz
60˚
30˚
180˚
S21
4 GHz
S12
0.1 GHz 0.5 .10 .15 .20 .25 0˚
0.4
S21
0.1 GHz
0.8
-150˚ 1.2 -30˚
1.6
-120˚
S212.0
-90˚
-60˚
NE02107B
VCB = 10 V, IC = 5 mA
FREQUENCY
S11
S21 S12
S22 K MAG1
(MHz)
MAG ANG
MAG ANG
MAG ANG
MAG ANG
(dB)
100
500
1000
1500
2000
2500
3000
3500
4000
.79 175
.79 170
.79 163
.83 157
.83 149
.87 145
.87 136
.87 126
.86 117
1.77 -10
1.78 -24
1.72 -44
1.71 -64
1.57 -87
1.53 -99
1.40 -122
1.21 -140
1.12 -164
.01 106
.01 111
.01 117
.03 109
.06 106
.08 103
.11 95
.13 86
.17 76
1.01 -9
1.02 -22
1.05 -40
1.09 -58
1.09 -75
1.08 -81
1.11 -96
1.10 -111
1.08 -125
-0.477
-0.808
-1.645
-1.076
-0.782
-0.574
-0.484
-0.427
-0.180
22.480
22.504
22.355
17.559
14.177
12.816
11.047
9.688
8.188
VCB = 10 V, IC = 10 mA
100 .88 177
500 .88 171
1000
.87 164
1500
.90 159
2000
.92 152
2500
.95 144
3000
.96 135
3500
.96 125
4000
.95 116
1.84 -6
1.84 -19
1.83 -38
1.82 -57
1.72 -76
1.68 -92
1.57 -113
1.45 -135
1.33 -156
.01 -31
.01 112
.01 132
.03 118
.06 117
.08 108
.12 98
.15 88
.18 77
1.01 -6
1.00 -18
1.05 -36
1.08 -53
1.10 -69
1.09 -81
1.13 -96
1.12 -111
1.10 -126
0.671
-0.431
-1.429
-0.950
-0.857
-0.707
-0.601
-0.458
-0.317
22.648
22.648
22.625
17.830
14.574
13.222
11.167
9.853
8.686
VCB = 10 V, IC = 20 mA
100 .92 176
500 .93 171
1000
.92 164
1500
.96 159
2000
.97 152
2500
1.01 142
3000
1.02 132
3500
1.03 121
4000
1.02 112
1.90 -6
1.89 -19
1.89 -37
1.88 -55
1.81 -75
1.75 -90
1.67 -110
1.55 -132
1.42 -154
.01 56
.01 139
.01 129
.03 126
.06 119
.09 110
.12 100
.15 89
.18 79
1.02 -6
1.01 -18
1.05 -36
1.09 -53
1.10 -69
1.09 -80
1.13 -95
1.13 -110
1.12 -125
0.315
-0.850
-1.189
-0.960
-0.832
-0.727
-0.658
-0.532
-0.388
22.788
22.765
22.765
17.970
14.795
12.888
11.435
10.142
8.970
VCB = 10 V, IC = 40 mA
100 .95 176
600 .94 171
1000
.94 163
1500
.98 158
2000
.99 151
2500
1.04 141
3000
1.05 132
3500
1.05 120
4000
1.03 111
1.93 -7
1.91 -20
1.91 -38
1.90 -57
1.83 -77
1.81 -92
1.72 -115
1.58 -136
1.46 -157
.01 -74
.01 116
.01 133
.03 126
.06 119
.09 111
.12 100
.15 88
.18 77
1.02 -7
1.01 -19
1.05 -36
1.09 -53
1.10 -69
1.09 -81
1.13 -97
1.13 -113
1.10 -127
0.239
-0.583
-1.140
-0.901
-0.798
-0.727
-0.591
-0.502
-0.341
22.856
22.810
22.810
18.016
14.843
13.034
11.563
10.226
9.091
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 12 ページ
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部品番号部品説明メーカ
NE02132

NPN Silicon High Frequency Transistor

NEC
NEC
NE02133

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL
CEL
NE02133

NPN Silicon High Frequency Transistor

NEC
NEC
NE02133-T1B

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

ETC
ETC

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