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IRF6785MTRPBF の電気的特性と機能

IRF6785MTRPBFのメーカーはInternational Rectifierです、この部品の機能は「Digital Audio MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
IRF6785MTRPBF
部品説明
Digital Audio MOSFET
メーカ
International Rectifier
ロゴ

International Rectifier ロゴ 




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IRF6785MTRPBF Datasheet, IRF6785MTRPBF PDF,ピン配置, 機能
PD - 97282
IRF6785MTRPbFDIGITAL AUDIO MOSFET
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 250W per channel into 8Load in
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Key Parameters
VDS 200
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max
85
26
3.0
V
m:
nC
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
200
± 20
19
3.4
2.7
27
57
2.8
1.8
33
8.4
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1
04/18/07
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF6785MTRPBF pdf, ピン配列
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VDS = 25V
60µs PULSE WIDTH
10 TJ = -40°C
TJ = 25°C
TJ = 150°C
1
IRF6785MTRPbF
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.5V
1
0.1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 4.2A
VGS = 10V
2.0
1.5
1.0
0.1
345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
12.0
10.0
8.0
ID= 4.2A
VDS= 160V
VDS= 100V
VDS= 40V
6.0
4.0
2.0
10
1
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
www.irf.com
0.0
0
5 10 15 20 25 30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRF6785MTRPBF 電子部品, 半導体
IRF6785MTRPbF
L
VCC
DUT
0
210K S
Id
Vgs
Vds
Vgs(th)
Fig 17a. Gate Charge Test Circuit
Qgodr
Qgd Qgs2 Qgs1
Fig 17b. Gate Charge Waveform
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

RG
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
*
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
** +
ISD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Reverse
Recovery
Current
Re-Applied
Voltage
D.U.T. ISD Waveform
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode Forward Drop
Inductor Curent
Ripple 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V*G*S*=10V
VDD
ISD
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 9 ページ
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部品番号部品説明メーカ
IRF6785MTRPbF

DIGITAL AUDIO MOSFET

IRF
IRF
IRF6785MTRPBF

Digital Audio MOSFET

International Rectifier
International Rectifier

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