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IRF7665S2TR1PBF の電気的特性と機能

IRF7665S2TR1PBFのメーカーはInternational Rectifierです、この部品の機能は「Digital Audio MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号
IRF7665S2TR1PBF
部品説明
Digital Audio MOSFET
メーカ
International Rectifier
ロゴ

International Rectifier ロゴ 




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IRF7665S2TR1PBF Datasheet, IRF7665S2TR1PBF PDF,ピン配置, 機能
DIGITAL AUDIO MOSFET
PD - 96239
IRF7665S2TRPbF
IRF7665S2TR1PbF
Features
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 100W per channel into 8with no heatsink Š
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
· Lead-Free (Qualified up to 260°C Reflow)
· Industrial Qualified
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
51
8.3
3.5
V
m:
nC
SB DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SB SC
M2 M4
L4 L6 L8
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
TJ
TSTG
Maximum Power Dissipation
jPower Dissipation
jPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
hJunction-to-Ambient
iJunction-to-Ambient
jkJunction-to-Can
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
100
± 20
14.4
10.2
4.1
58
30
15
2.4
0.2
-55 to + 175
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/02/09
Free Datasheet http://www.Datasheet4U.com

1 Page





IRF7665S2TR1PBF pdf, ピン配列
100
10
1
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
0.1
0.01
5.0V
0.001
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
100
10
IRF7665S2TR/TR1PbF
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.1
5.0V
60µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.5
ID = 8.9A
VGS = 10V
2.0
1 TJ = -40°C
TJ = 25°C
TJ = 175°C
0.1
VDS = 25V
60µs PULSE WIDTH
0.01
2 4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
14.0
ID= 8.9A
12.0
VDS= 80V
10.0 VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
10
1
10 100
Fig 5. TypicalVCDSa,pDarcaiitna-tnoc-Seouvrsc.eDVroalitnag-teo(-VS)ource Voltage
www.irf.com
0.0
0 2 4 6 8 10 12
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
Free Datasheet http://www.Datasheet4U.com


3Pages


IRF7665S2TR1PBF 電子部品, 半導体
IRF7665S2TR/TR1PbF
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 17a. Gate Charge Test Circuit
D.U.T
+
‚
-

RG
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 17b. Gate Charge Waveform
+
ƒ Circuit Layout Considerations
Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
-„ +
di/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
InduIcntdourctCoruCreurnret nt
Forward Drop
VDD
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
6 www.irf.com
Free Datasheet http://www.Datasheet4U.com

6 Page

合計 : 9 ページ
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部品番号部品説明メーカ
IRF7665S2TR1PbF

DIGITAL AUDIO MOSFET

IRF
IRF
IRF7665S2TR1PBF

Digital Audio MOSFET

International Rectifier
International Rectifier

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