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UGF27025 の電気的特性と機能
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UGF27025のメーカーはCREEです、この部品の機能は「28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 UGF27025 |
| 部品説明 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET |
| メーカ CREE |
ロゴ |
このページの下部にプレビューとUGF27025ダウンロード（pdfファイル）リンクがあります。 Total 7 pages |
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UGF27025
25W, 2.7 GHz, 28V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for base station applications in the frequency band 2.5 to 2.7 GHz. Rated with a
minimum output power of 25W, it is ideal for CW and Multi-Tone Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability
• Industry standard package
• Internally matched for repeatable manufacturing
• High gain, high efficiency and high linearity
• Integrated ESD Protection.
• Maximum gain and insertion phase flatness.
• Output load VSWR tolerance 10:1 all phase angles at
28VDC, 2500MHz, 25W (CW) output power.
• Common source.
• Application Specific Performance, 2.7 GHz
• Typical 2-Tone Performance
Average Load Power – 12.5 W
ηD – 30%
Power Gain – 11.5 dB
IMD3: -30dBc @ -100kHz/ +100KHz
VDD – 28V
www.DataSheet4IUD.cQom– 330mA
• Typical CW Performance
Average Load Power – 25 W
ηD – 38%
Power Gain – 11.0 dB
VDD – 28V
IDQ – 330mA
Package Type 440159
PN: UGF27025F
Page 1 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1
1 Page
UGF27025
AC Characteristics (Tc=25°C unless otherwise specified)
Rating
Symbol
Min Typ Max Unit
Input capacitance * (including matching capacitor)
(VDS=28V, VGS=0V, f = 1MHz)
Output capacitance * (including matching capacitor)
(VDS= 28V, VGS=0V, f = 1MHz)
Feedback capacitance *
(VDS=28V, VGS=0V, f = 1MHz)
* Part is internally matched on input and output.
CISS
COSS
CRSS
- 74 - pF
- 352 - pF
- 1.6 - pF
RF and Functional Tests (In Cree Microwave Broadband Fixture, Tc=25° C unless otherwise specified)
Rating
Symbol
Min Typ Max Unit
CW Low Power Gain, Pout=8W
VDD=28V, IDQ=330mA, f=2700 MHz
CW Power Gain, Pout = 25 W
VDD=28V, IDQ=330mA, f=2700 MHz
CW Drain Efficiency, Pout = 25 W,
f=2700 MHz, VDD=28V, IDQ=330mA
Two-Tone Common-Source Amplifier Power Gain
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Intermodulation Distortion
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Two-Tone Drain Efficiency
VDD=28V, IDQ=330mA, Pout = 25 W PEP
f1 =2700 MHz and f2=2700.1 MHz
Input Return Loss
VDD =28V, Pout = 25 W PEP, IDQ=330mA
f1 =2500 MHz and 2700 MHz, Tone Spacing =
www.DataShee1t40U0.kcoHmz
Load Mismatch Tolerance
VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz
GL
GP
ηD
GTT
IMD
ηD2Τ
IRL
VSWR
11 12 - dB
10 11 - dB
34 38 - %
10.5 11.5 - dB
- -30 -28 dBc
26 30 - %
- - -9 dB
10:1 - - Ψ
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1
3Pages
Product Dimensions
UGF27025F -Package Number 440159
UGF27025
www.DataSheet4U.com
Page 6 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1
6 Page
合計 : 7 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| UGF27025 | 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET | CREE |