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RJP4002ANS の電気的特性と機能
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RJP4002ANSのメーカーはRenesas Technologyです、この部品の機能は「Nch IGBT」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 RJP4002ANS |
| 部品説明 Nch IGBT |
| メーカ Renesas Technology |
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RJP4002ANS
Nch IGBT for Strobe Flash
Features
• Ultra small surface mount package (VSON-8)
• VCES: 400 V
• ICM: 150 A
• Drive voltage: 2.5 V
REJ03G1472-0100
Rev.1.00
Oct 13, 2006
Outline
RENESAS Package code: PVSN0008JA-A
(Package name: VSON-8<TNP-8DBV>)
5
8
4
1
87 6 5
12 3 4
1, 2 : Emitter
3 : Emitter
(for the gate drive)
4 : Gate
5, 6, 7, 8 : Collector
Note: Pin 3 is for the gate drive only.
Note that current from the main circuit cannot flow into this section. (Please see page 3)
Applications
Strobe flash for cameras
Maximum Ratings
www.DataSheet4U.com
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulse)
Junction temperature
Storage temperature
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Ratings
400
±4
±6
150
– 40 to +150
– 40 to +150
Unit
V
V
V
A
°C
°C
(Tc = 25°C)
Conditions
VGE = 0 V
VCE = 0 V
VCE = 0 V, tw = 10 s
CM = 400 µF
(see performance curve)
Rev.1.00 Oct 13, 2006 page 1 of 4
1 Page
RJP4002ANS
Application Example
VCM
Trigger Transformer
Xe Tube
CM +
–
8 765
1 234
IGBT driver
RD3CYD08
VCM
ICP
CM
VGE
Recommended Operation Maximum Operation
Conditions
Conditions
330 V
350 V
130 A
150 A
300 µF
400 µF
2.85 V
2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the
device from electrostatic charge.
2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And
www.DataShtuerent4-oUf.cfodmv/dt must become less than 400 V/ µs. In general, when RG (off) = 30 Ω, it is satisfied.
3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a
large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large
currents since the specified gate voltage is not applied to the IGBT within the device.
4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe ≤ 150 A :
full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over
3 seconds.
5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 4 V.
Rev.1.00 Oct 13, 2006 page 3 of 4
3Pages
合計 : 5 ページ |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| RJP4002ANS | Nch IGBT | Renesas Technology |