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SPN1024 の電気的特性と機能
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SPN1024のメーカーはSYNC POWERです、この部品の機能は「Dual N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN1024 |
| 部品説明 Dual N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN1024ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPN1024
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1024 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
N-Channel
20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
PIN CONFIGURATION( SOT-563 / SC-89-6L)
www.DataSheet4U.com
PART MARKING
2007/11/10 Ver.1
Page 1
1 Page
SPN1024
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwT.Duartna-SOhenetT4Uim.ceom
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS VDS= 20V,VGS=0V
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=0.65A
VGS=2.5V,ID=0.55A
VGS=1.8V,ID=0.45A
VDS=10V,ID=0.4A
IS=0.15A,VGS=0V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID≡0.6A
VDD=10V,RL=10Ω ,
ID≡0.5A
VGEN=4.5V ,RG=6Ω
20 V
0.35 1.0
100 nA
1
5 uA
0.7 A
0.26 0.38
0.32 0.45 Ω
0.42 0.80
1.0 S
0.8 1.2 V
1.2 1.5
0.2 nC
0.3
5 10
8 15 ns
10 18
1.2 2.8
2007/11/10 Ver.1
Page 3
3Pages
SPN1024
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/11/10 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPN1024 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN1022 | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN1022 | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN1022S56RGB | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN1024 | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |