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SPN2308 の電気的特性と機能
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SPN2308のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN2308 |
| 部品説明 N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN2308ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPN2308
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2308 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
FEATURES
20V/2.0A,RDS(ON)=380mΩ@VGS=4.5V
20V/1.5A,RDS(ON)=450mΩ@VGS=2.5V
20V/1.0A,RDS(ON)=800mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23-3L package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOT-23-3L)
www.DataSheet4U.com
PART MARKING
2007/06/25 Ver.1
Page 1
1 Page
SPN2308
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID= 250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS= 20V,VGS=0V
IDSS VDS= 20V,VGS=0V
TJ=55℃
ID(on) VDS≥ 4.5V,VGS =5V
RDS(on)
gfs
VSD
VGS=4.5V,ID=2.0A
VGS=2.5V,ID=1.5A
VGS=1.8V,ID=1.0A
VDS=10V,ID=1.2A
IS=0.5A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V,
ID≡0.7A
VDS=10VGS=0V
f=1MHz
VDD=10V,RL=10Ω ,
ID≡1.0A
VGEN=4.5V ,RG=6Ω
20 V
0.35 1.0
100 nA
1
5 uA
2A
0.15 0.38
0.21 0.45 Ω
0.32 0.80
2.6 S
0.8 1.2 V
1.2 1.5
0.2 nC
0.3
110
34 pF
16
5 10
8 15 ns
10 18
1.2 2.8
2007/06/25 Ver.1
Page 3
3Pages
SPN2308
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/06/25 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPN2308 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN2302 | N-Channel Enhancement Mode MOSFET |  ETC |
| SPN2302A | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN2302D | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN2302DS23RG | N-Channel Enhancement Mode MOSFET | SYNC POWER |