|
SPN3458 の電気的特性と機能
|
SPN3458のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 SPN3458 |
| 部品説明 N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN3458ダウンロード（pdfファイル）リンクがあります。 Total 9 pages |
No Preview Available ! |
SPN3458
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN3458 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
60V/5.0A,RDS(ON)= 115Ω@VGS=10V
60V/4.5A,RDS(ON)= 125Ω@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOP-6P package design
PIN CONFIGURATION( TSOP– 6P )
www.DataSheet4U.com
PART MARKING
2008/12/31 Ver.1
Page 1
1 Page
SPN3458
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
www.DataSheet4U.com
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
ID(on)
RDS(on)
gfs
VDS=60V,VGS=0.0V
VDS=60V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=5.0A
VGS =4.5V,ID=4.5A
VDS=15V,ID=4.0A
VSD IS=2.5A,VGS=0V
60 V
0.5 1.5
±100 nA
1
10 uA
10 A
0.106 0.115
0.118 0.125
Ω
12 S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V, VGS=4.5V
ID≡4.0A
VDS=30V, VGS=0V
f=1MHz
VDD=30V ,RL=12Ω
ID≡2.5A,VGEN=10V
RG=6Ω
4.0 6
1.2 nC
1.0
320
42 pF
20
6 10
12 20 ns
18 30
10 15
2008/12/31 Ver.1
Page 3
3Pages
SPN3458
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2008/12/31 Ver.1
Page 6
6 Page
合計 : 9 ページ |
| PDF ダウンロード [ SPN3458 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| SPN3456 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN3456 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN3458 | N-Channel Enhancement Mode MOSFET | SYNC POWER |