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SPN4506 の電気的特性と機能
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SPN4506のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN4506 |
| 部品説明 N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN4506ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPN4506
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4506 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
40V/10A,RDS(ON)= 10mΩ@VGS= 10V
40V/ 8A,RDS(ON)= 12mΩ@VGS= 4.5V
40V/ 6A,RDS(ON)= 16mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2009/ 08/ 20 Ver.1
Page 1
1 Page
SPN4506
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
www.DataSheet4U.com
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=40V,VGS=0V
IDSS VDS=40V,VGS=0V
TJ=85℃
ID(on) VDS= 5V,VGS =4.5V
RDS(on)
gfs
VGS= 10V,ID=10A
VGS=4.5V,ID= 8A
VGS=2.5V,ID= 6A
VDS=15V,ID=6.2A
VSD IS=2.3A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4Ω
ID≡5.0A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
40 V
0.5 1.0
±100 nA
1
10 uA
10 A
0.007
0.008
0.013
13
0.010
0.012
0.016
Ω
S
0.8 1.2 V
18 25
6.5 nC
5.8
1850
250 pF
155
10 15
15 25 nS
30 45
12 16
2009/ 08/ 20 Ver.1
Page 3
3Pages
SPN4506
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2009/ 08/ 20 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPN4506 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN4506 | N-Channel Enhancement Mode MOSFET | SYNC POWER |