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SPN4900 の電気的特性と機能
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SPN4900のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN4900 |
| 部品説明 N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN4900ダウンロード（pdfファイル）リンクがあります。 Total 9 pages |
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SPN4900
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN4900 is the Dual N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
60V/5.3A,RDS(ON)= 118mΩ@VGS= 10V
60V/4.7A,RDS(ON)= 125mΩ@VGS= 4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOP – 8P package design
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2008/ 11/ 10 Ver.1
Page 1
1 Page
SPN4900
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=60V,VGS=0V
IDSS VDS=60V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=5.3A
VGS=4.5V,ID=4.7A
gfs VDS=15V,ID=4.3A
VSD IS=1.7A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID= 4.3A
VDS=15,VGS=0V
f=1MHz
VDD=30V,RL=8.8Ω
ID≡3.4A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
60 V
0.5 1.5
±100 nA
1
5 uA
25 A
0.110
0.115
15
0.118
0.125
Ω
S
0.8 1.2 V
15 20
2.5 nC
2.6
675
80 pF
40
10 20
15 25 nS
25 35
12 20
2008/ 11/ 10 Ver.1
Page 3
3Pages
SPN4900
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2008/ 11/ 10 Ver.1
Page 6
6 Page
合計 : 9 ページ |
| PDF ダウンロード [ SPN4900 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN4900 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN4906 | N-Channel Enhancement Mode MOSFET | SYNC POWER |