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SPN8878 の電気的特性と機能
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SPN8878のメーカーはSYNC POWERです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN8878 |
| 部品説明 N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN8878ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8878 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low RDS(ON) and fast
switching speed.
APPLICATIONS
z Power Management in Note book
z Powered System
z DC/DC Converter
z Load Switch
FEATURES
30V/20A,RDS(ON)= 12mΩ@VGS=10V
30V/15A,RDS(ON)= 17mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
PIN CONFIGURATION
TO-252
www.DataSheet4U.com
PART MARKING
2009/04/20 Ver.1
Page 1
1 Page
SPN8878
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
wwwR.DeavtaeSrsheeeTt4rUa.ncsofmer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
VDS=24V,VGS=0V
IDSS VDS=24V,VGS=0V
TJ=85℃
ID(on) VDS≥5V,VGS =10V
RDS(on)
VGS= 10V,ID=20A
VGS=4.5V,ID=15A
gfs VDS=15V,ID=20A
VSD IS=40A,VGS =0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=10V
ID= 50A
VDS=15VGS=0V
f=1MHz
VDD=15V,RL=0.3Ω
ID≡50A,VGEN=10V
RG=1Ω
Min. Typ Max. Unit
30 V
1.0 3.0
±100 nA
1
5 uA
40 A
0.010 0.012
0.013 0.017
Ω
15 S
0.8 1.5 V
28 42
6 nC
5
1600
285 pF
140
9 15
15 25 nS
20 30
12 20
2009/04/20 Ver.1
Page 3
3Pages
SPN8878
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2009/04/20 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPN8878 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN8878 | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878B | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878BT251TGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8878BT252RGB | N-Channel Enhancement Mode MOSFET | SYNC POWER |