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SPN8822 の電気的特性と機能
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SPN8822のメーカーはSYNC POWERです、この部品の機能は「Dual N-Channel Enhancement Mode MOSFET」です。 |
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製品の詳細 ( Datasheet PDF )
| 部品番号 SPN8822 |
| 部品説明 Dual N-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPN8822ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
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SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
DESCRIPTION
The SPN8822 is the Common-Drain Dual N-Channel
logic enhancement mode power field effect transistors are
produced using high cell density , DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These devices
are particularly suited for low voltage application ,
notebook computer power management and other battery
powered circuits where high-side switching .
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
20V/8.0A,RDS(ON)= 24mΩ@VGS= 4.5V
20V/7.0A,RDS(ON)= 32mΩ@VGS= 2.5V
20V/3.0A,RDS(ON)= 42mΩ@VGS= 1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSSOP – 8P package design
PIN CONFIGURATION(SOP – 8P)
www.DataSheet4U.com
PART MARKING
2007/04/23 Ver.1
Page 1
1 Page
SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
wwwI.nDpatuatSCheaept4aUc.ictoamnce
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±12V
VDS=20V,VGS=0V
IDSS VDS=20V,VGS=0V
TJ=55℃
ID(on) VDS≥5V,VGS=4.5V
RDS(on)
gfs
VSD
VGS= 4.5V,ID=8.0A
VGS= 2.5V,ID=7.0A
VGS= 1.8V,ID=3.0A
VDS=15V,ID=5.0A
IS=1.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID≡5.0A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=10Ω
ID≡1.0A,VGEN=4.5V
RG=6Ω
Min. Typ Max. Unit
20 V
0.4 1.0
±100 nA
1
10 uA
6A
0.020
0.024
0.032
30
0.8
0.024
0.032
0.042
1.2
Ω
S
V
10 13
1.4 nC
2.1
600
120 pF
100
15 25
40 60 ns
45 65
30 40
2007/04/23 Ver.1
Page 3
3Pages
SPN8822
Common-Drain Dual N-Channel
Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/04/23 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPN8822 データシート.PDF ] |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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| 部品番号 | 部品説明 | メーカ |
| SPN8822 | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |
| SPN8822A | Dual N-Channel Enhancement Mode MOSFET | SYNC POWER |