|
SPP102 の電気的特性と機能
|
SPP102のメーカーはSYNC POWERです、この部品の機能は「Dual P-Channel Enhancement Mode MOSFET」です。 |
|
|
製品の詳細 ( Datasheet PDF )
| 部品番号 SPP102 |
| 部品説明 Dual P-Channel Enhancement Mode MOSFET |
| メーカ SYNC POWER |
ロゴ |
このページの下部にプレビューとSPP102ダウンロード（pdfファイル）リンクがあります。 Total 8 pages |
No Preview Available ! |
SPP1023
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPP1023 is the Dual P-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
P-Channel
-20V/0.45A,RDS(ON)= 0.52Ω@VGS=-4.5V
-20V/0.35A,RDS(ON)= 0.70Ω@VGS=-2.5V
-20V/0.25A,RDS(ON)= 0.95Ω@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
www.DataSheet4U.com
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
2007/10/31 Ver.1
Page 1
1 Page
SPP1023
Dual P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
www.DataSheet4U.com
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=-250uA
VGS(th) VDS=VGS,ID=-250uA
IGSS VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
IDSS VDS=-20V,VGS=0V
TJ=55℃
ID(on) VDS≤ -4.5V,VGS =-5V
RDS(on)
gfs
VGS=-4.5V,ID=-0.45A
VGS=-2.5V,ID=-0.35A
VGS=-1.8V,ID=-0.25A
VDS=-10V,ID=-0.25A
VSD IS=-0.15A,VGS=0V
-20
-0.35
-0.8
±100
-1
-5
V
nA
uA
-0.7 A
0.42 0.52
0.58 0.70 Ω
0.75 0.95
0.4 S
-0.8 -1.2 V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-10V,VGS=-4.5V ,ID
≡-0.6A
VDD=-10V,RL=10Ω ,
ID≡-0.4A
VGEN=-4.5V ,RG=6Ω
1.5 2.0
0.3 nC
0.35
5 10
15 25 ns
8 15
1.4 1.8
2007/10/31 Ver.1
Page 3
3Pages
SPP1023
Dual P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
www.DataSheet4U.com
2007/10/31 Ver.1
Page 6
6 Page
合計 : 8 ページ |
| PDF ダウンロード [ SPP102 データシート.PDF ] |
|
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
|
|
| 部品番号 | 部品説明 | メーカ |
| SPP100N03S2-03 | OptiMOS Power-Transistor |  Infineon Technologies |
| SPP100N03S2L-03 | OptiMOS Power-Transistor | Infineon Technologies |
| SPP100N04S2-04 | OptiMOS Power-Transistor | Infineon Technologies |
| SPP100N04S2L-03 | OptiMOS Power-Transistor | Infineon Technologies |